Ultrafast photocarrier dynamics related to defect states of SiGe nanowires measured by optical pump-THz probe spectroscopy.

Slightly tapered SiGe nanowires (NWs) (x = 0.29-0.84) were synthesized via a vapor-liquid-solid procedure using Au as a catalyst.

Interfacial Layer Control by Dry Cleaning Technology for Polycrystalline and Single Crystalline Silicon Growth.

Native oxide removal prior to poly-Si contact and epitaxial growth of Si is the most critical technology to ensure process and device performances of poly-Si plugs and selective epitaxial growth (SEG) layers for DRAM, flash memory, and logic device. Recently, dry cleaning process for interfacial oxide removal has attracted a world-wide attention due to its superior passivation properties to conventional wet cleaning processes. In this study, we investigated the surface states of Si substrate during and after dry cleaning process, and the role of atomic elements including fluorine and hydrogen on the properties of subsequent deposited silicon layer using SIMS, XPS, and TEM analysis.

Strongly enhanced THz emission caused by localized surface charges in semiconducting Germanium nanowires.

A principal cause of THz emission in semiconductor nanostructures is deeply involved with geometry, which stimulates the utilization of indirect bandgap semiconductors for THz applications. To date, applications for optoelectronic devices, such as emitters and detectors, using THz radiation have focused only on direct bandgap materials. This paper reports the first observation of strongly enhanced THz emission from Germanium nanowires (Ge NWs).