Electrical bistabilities and memory mechanisms of organic bistable devices fabricated utilizing SnO2 nanoparticles embedded in a poly(methyl methacrylate) layer.

Organic bistable devices fabircated utilizing SnO2 nanoparticles embedded in a poly(methyl methacrylate) (PMMA) polymer layer were formed by using a spin coating method. Transmission electon microscopy images and photoluminescence spectra showed that synethized SnO2 nanoparticles were randomly distributed in the dibutyl ehter solution. Current-voltage (I-V) measurements on the Al/SnO2 nanoparticles embedded in PMMA layer/ITO devices at 300 K showed current bistability due to the existence of SnO2 nanoparticles.