Direct Growth of BiSeO Thin Films for High-k Dielectrics via Atomic Layer Deposition.

This study describes a modified atomic layer deposition (ALD) process for fabricating BiOSe thin films, targeting their application as high-k dielectrics in semiconductor devices, especially for two-dimensional semiconductors. Using an intermediate-enhanced ALD technique for BiSe and a plasma-enhanced ALD process for BiO, a method for the sequential deposition of BiSeO ternary films has been established. The thin film has been deposited on SiO and TiN substrates, exhibiting growth rates of 0.

Purely self-rectifying memristor-based passive crossbar array for artificial neural network accelerators.

Memristor-integrated passive crossbar arrays (CAs) could potentially accelerate neural network (NN) computations, but studies on these devices are limited to software-based simulations owing to their poor reliability. Herein, we propose a self-rectifying memristor-based 1 kb CA as a hardware accelerator for NN computations. We conducted fully hardware-based single-layer NN classification tasks involving the Modified National Institute of Standards and Technology database using the developed passive CA, and achieved 100% classification accuracy for 1500 test sets.

Self-rectifying resistive memory in passive crossbar arrays.

Conventional computing architectures are poor suited to the unique workload demands of deep learning, which has led to a surge in interest in memory-centric computing. Herein, a trilayer (HfSiO/AlO/HfSiO)-based self-rectifying resistive memory cell (SRMC) that exhibits (i) large selectivity (ca. 10), (ii) two-bit operation, (iii) low read power (4 and 0.

Fully "Erase-free" Multi-Bit Operation in HfO-Based Resistive Switching Device.

Fully "Erase-free" multi-bit operation was demonstrated in a W/HfO/TiN-stacked resistive switching device. The term Erase-free means that a digital state in a multi-bit operation can be achieved without initializing the device resistance state when the device moves to another digital state. Because initializing the resistance state of a resistive switching device causes high energy consumption, omitting this sequence can achieve energy efficient multi-bit operation during rewriting of the resistance state of the device.