Fast and label-free detection of procalcitonin in human serum for sepsis using a WTe-based extended-gate field-effect transistor biosensor.

In this article, we present the first instance of depositing WTe-sensitive films with varying thicknesses (3, 4, and 5 nm) onto flexible polyimide substrates using radio-frequency sputtering. These films were used to create an extended-gate field-effect transistor (EGFET) for pH sensing and detecting procalcitonin (PCT) in the sera of patients with sepsis or bacterial infections. Among the films, the 4 nm WTe film exhibited high sensitivity (59.

A simple and highly sensitive flexible sensor with extended-gate field-effect transistor for epinephrine detection utilizing InZnSnO sensing films.

This study introduces a straightforward method for depositing InZnSnO films onto flexible polyimide substrates at room temperature, enabling their application in electrochemical pH sensing and the detection of epinephrine. A comprehensive analysis of these sensing films, spanning structural, morphological, compositional, and profiling characteristics, was conducted using diverse techniques, including X-ray diffraction, atomic force microscopy, X-ray photoelectron spectroscopy, and secondary ion mass spectroscopy. The investigation into the influence of oxygen flow rates on the performance of InZnSnO sensitive films revealed a significant correlation between their structural properties and sensing capabilities.

Sensing and Impedance Characteristics of YbTaO Sensing Membranes.

In this study we developed ytterbium tantalum oxide (YbTaO) sensing membranes for use in electrolyte-insulator-semiconductor (EIS) pH sensors. The influence of rapid thermal annealing (RTA) treatment on the sensing and impedance properties of the YbTaO sensing membranes deposited through reactive co-sputtering onto Si substrates was explored. X-ray diffraction, atomic force microscopy, and X-ray photoelectron spectroscopy revealed the structural, morphological, and chemical features, respectively, of these YbTaO films annealed at 700, 800 and 900 °C.

High performance sol-gel synthesized CeSr(ZrTi)O sensing membrane for a solid-state pH sensor.

In this paper, we developed a high-performance solid-state pH sensor using a CeSr(ZrTi)O (CSZT) membrane through a very simple sol-gel spin-coating process. The structural properties of the CSZT membrane are correlated with its sensing characteristics. The CSZT based EIS sensor exhibited a high pH sensitivity of 92.

Magnetoreception Regulates Male Courtship Activity in Drosophila.

The possible neurological and biophysical effects of magnetic fields on animals is an area of active study. Here, we report that courtship activity of male Drosophila increases in a magnetic field and that this effect is regulated by the blue light-dependent photoreceptor cryptochrome (CRY). Naïve male flies exhibited significantly increased courtship activities when they were exposed to a ≥ 20-Gauss static magnetic field, compared with their behavior in the natural environment (0 Gauss).

Resistive switching behavior in Lu2O3 thin film for advanced flexible memory applications.

In this article, the resistive switching (RS) behaviors in Lu2O3 thin film for advanced flexible nonvolatile memory applications are investigated. Amorphous Lu2O3 thin films with a thickness of 20 nm were deposited at room temperature by radio-frequency magnetron sputtering on flexible polyethylene terephthalate substrate. The structural and morphological changes of the Lu2O3 thin film were characterized by x-ray diffraction, atomic force microscopy, and x-ray photoelectron spectroscopy analyses.

Structural and electrical characteristics of high-κ Er2O3 and Er2TiO5 gate dielectrics for a-IGZO thin-film transistors.

In this letter, we investigated the structural and electrical characteristics of high-κ Er2O3 and Er2TiO5 gate dielectrics on the amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film transistor (TFT) devices. Compared with the Er2O3 dielectric, the a-IGZO TFT device incorporating an Er2TiO5 gate dielectric exhibited a low threshold voltage of 0.39 V, a high field-effect mobility of 8.

Copper halide-bridged ruthenium telluride carbonyl complexes: discovery of the semiconducting cluster chain polymer {[PPh4]2[Te2Ru4(CO)10Cu4Br2Cl2].THF}infinity.

A new series of Te-Ru-Cu carbonyl complexes was prepared by the reaction of K(2)TeO(3) with [Ru(3)(CO)(12)] in MeOH followed by treatment with PPh(4)X (X=Br, Cl) and [Cu(MeCN)(4)]BF(4) or CuX (X=Br, Cl) in MeCN. When the reaction mixture of K(2)TeO(3) and [Ru(3)(CO)(12)] was first treated with PPh(4)X followed by the addition of [Cu(MeCN)(4)]BF(4), doubly CuX-bridged Te(2)Ru(4)-based octahedral clusters [PPh(4)](2)[Te(2)Ru(4)(CO)(10)Cu(2)X(2)] (X=Br, [PPh(4)](2)[1]; X=Cl, [PPh(4)](2)[2]) were obtained. When the reaction mixture of K(2)TeO(3) and [Ru(3)(CO)(12)] was treated with PPh(4)X (X=Br, Cl) followed by the addition of CuX (X=Br, Cl), three different types of CuX-bridged Te-Ru carbonyl clusters were obtained.