Publications by authors named "Jiecui Liao"

Molybdenum disulfide/porous silicon nanowire (MoS/PSiNW) heterojunctions with different thicknesses as highly-responsive NO gas sensors were obtained in the present study. Porous silicon nanowires were fabricated using metal-assisted chemical etching, and seeded with different thicknesses. After that, MoS nanosheets were synthesized by sulfurization of direct-current (DC)-magnetic-sputtering Mo films on PSiNWs.

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A new structure of honeycomb-like ZnO mesoporous nanowall arrays (MNWAs) with highly efficient photocatalytic activity was designed and successfully synthesized on Al foil by hydrothermal method. The nanowalls of ZnO-MNWAs have mesopores, which possess a large surface area. The visible light absorption of ZnO-MNWAs was efficiently stronger than ZnO nanowire, resulting in that the photocatalytic activity of ZnO-MNWAs, whose bandgap energy was 3.

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In this research, ZnO nanowires doped with Mn and Co ions were synthesized through a facile and inexpensive hydrothermal approach, in which Mn and Co ions successfully substituted Zn in the ZnO crystal lattice without changing the morphology and crystalline structure of ZnO. The atomic percentages of Mn and Co were 6.29% and 1.

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ZnO-CdS, ZnO-ZnS, and ZnO-Ag2S core-shell heterojunction structures were fabricated using low-temperature, facile and simple aqueous solution approaches. The polycrystalline sulfide shells effectively enhance the field emission (FE) properties of ZnO nanowires arrays (NWAs). This results from the formation of the staggered gap heterointerface (ZnO-sulfide) which could lead to an energy well at the interfaces.

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A simple approach to Ag2S quantum dot (QD) modification was used to tune the field emission (FE) properties of ZnO nanowire arrays (NWAs). By a simple and facile successive ionic layer adsorption and reaction (SILAR) approach, Ag2S QDs were uniformly and densely packed on ZnO nanowires (NWs) to form ZnO-Ag2S core-shell heterojunction structures. The FE properties of ZnO NWAs were effectively tuned by controlling the amount of Ag2S QDs.

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A series of ZnO-CdS-Ag2S ternary nanostructures with different amounts of Ag2S were prepared using simple and low-cost successive ionic layer adsorption and reaction (SILAR) and a chemical precipitation method. The ZnO nanowires, with a diameter of ∼ 100 nm and a length of ∼ 1 μm, were modified by coating CdS and Ag2S. CdS has a high absorption coefficient and can efficiently match with the energy levels of ZnO, which can enhance the light absorption ability of the nanostructures.

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ZnO nanorod/porous silicon nanowire (ZnO/PSiNW) hybrids with three different structures as highly sensitive NO2 gas sensors were obtained. PSiNWs were first synthesized by metal-assisted chemical etching, and then seeded in three different ways. After that ZnO nanorods were grown on the seeded surface of PSiNWs using a hydrothermal procedure.

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This work presents a new method to improve the field emission (FE) properties of semiconductors decorated with low-cost graphene oxide (GO) nanosheets and trace amounts of noble metal. The Ag/GO/ZnO composite emitter exhibited efficient FE properties with a low turn-on field of 1.4 V μm(-1) and a high field enhancement factor of 7018.

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Graphene is one of the ideal nanomaterials to be paired with silicon, and their complementary properties can be exploited in field emission (FE) devices. We reported an efficient way to produce and adjust the dimension of uniform protrusions within graphene. First, a multistep template replication process was utilized to fabricate highly periodic and well-aligned silicon nanowires (SiNWs) of different diameters (400, 500 and 600 nm).

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Silicon nanorods (SiNRs) with a large interspace and regularly aligned structure were fabricated by combining silver-catalyzed etching with a polysterene (PS) sphere template, then a hydrothermal reaction was utilized to synthesize large-scale ZnO nanowires (NWs) on Si nanorods. Compared with the as-prepared SiNRs and ZnO NWs, the high-density ZnO NWs on SiNRs have exhibited predominant field emission (FE) characteristics with a low turn-on field of 2.18 V/μm and a high field enhancement factor of ∼8100.

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