Wafer Scale Gallium Nitride Integrated Electrode Toward Robust High Temperature Energy Storage.

Gallium Nitride (GaN), as the representative of wide bandgap semiconductors, has great prospects in accomplishing rapid charge delivery under high-temperature environments thanks to excellent structural stability and electron mobility. However, there is still a gap in wafer-scale GaN single-crystal integrated electrodes applied in the energy storage field. Herein, Si-doped GaN nanochannel with gallium oxynitride (GaON) layer on a centimeter scale (denoted by GaN NC) is reported.

Research Progress in Liquid Phase Growth of GaN Crystals.

As a wide band gap semiconductor, gallium nitride (GaN) has high breakdown voltage, excellent structural stability and mechanical properties, giving it unique advantages in applications such as high frequency, high power, and high temperature. As a result, it has broad application prospects in optoelectronics and microelectronics. However, the lack of high-quality, large-size GaN crystal substrates severely limit the improvement of electronic device performance.

Gallium Nitride Based Electrode for High-Temperature Supercapacitors.

Gallium nitride (GaN) single crystal, as the representative of wide-band semiconductors, has great prospects for high-temperature energy storage, of its splendid power output, robust temperature stability, and superior carrier mobility. Nonetheless, it is an essential challenge for GaN-based devices to improve energy storage. Herein, an innovative strategy is proposed by constructing GaN/Nickel cobalt oxygen (NiCoO  ）heterostructure for enhanced supercapacitors (SCs).

Metal-Organic Framework/Polythiophene Derivative: Neuronlike S-Doped Carbon 3D Structure with Outstanding Sodium Storage Performance.

Herein, a metal-organic framework (MOF)/polythiophene (PTh)-derived S-doped carbon is successfully designed and prepared employing zeolitic imidazolate frameworks (ZIF-8/ZIF-67) and thiophene (Th) as precursors. The S-doped carbon presents a neuronlike three-dimensional network structure (3DSC). The 3DSC delivers extra-high capacities (225 mAh/g at 5000 mA/g after 3000 cycles) and excellent endurance ability of current changes when applied in Na-ion batteries (SIBs).

Improving the quality of GaN crystals by using graphene or hexagonal boron nitride nanosheets substrate.

The progress in nitrides technology is widely believed to be limited and hampered by the lack of high-quality gallium nitride wafers. Though various epitaxial techniques like epitaxial lateral overgrowth and its derivatives have been used to reduce defect density, there is still plenty of room for the improvement of gallium nitride crystal. Here, we report graphene or hexagonal boron nitride nanosheets can be used to improve the quality of GaN crystal using hydride vapor phase epitaxy methods.

Influence of stress in GaN crystals grown by HVPE on MOCVD-GaN/6H-SiC substrate.

GaN crystals without cracks were successfully grown on a MOCVD-GaN/6H-SiC (MGS) substrate with a low V/III ratio of 20 at initial growth. With a high V/III ratio of 80 at initial growth, opaque GaN polycrystals were obtained. The structural analysis and optical characterization reveal that stress has a great influence on the growth of the epitaxial films.

Highly efficient visible light plasmonic photocatalyst Ag@Ag(Br,I).

The new plasmonic photocatalyst Ag@Ag(Br,I) was synthesized by the ion-exchange process between the silver bromide and potassium iodide, then by reducing some Ag(+) ions in the surface region of Ag(Br,I) particles to Ag(0) species. Ag nanoparticles are formed from Ag(Br,I) by the light-induced chemical reduction reaction. The Ag@Ag(Br,I) particles have irregular shapes with their sizes varying from 83 nm to 1 mum.

Self-template synthesis of CdIn(2)O(4) hollow spheres and effects of cd/in molar ratios on its morphologies.

CdIn(2)O(4) hollow spheres were synthesized by a self-template method. Cadmium nitrate (Cd(NO(3))(2).4H(2)O) and indium nitrate (In(NO(3))(3).