Effects of Etching Variations on Ge/Si Channel Formation and Device Performance.

During the formation of Ge fin structures on a silicon-on-insulator (SOI) substrate, we found that the dry etching process must be carefully controlled. Otherwise, it may lead to Ge over-etching or the formation of an undesirable Ge fin profile. If the etching process is not well controlled, the top Ge/SOI structure is etched away, and only the Si fin layer remains.

Determination of 1-hydroxypyrene in children urine using column-switching liquid chromatography and fluorescence detection.

This study developed an acid hydrolysis method instead of using enzyme extraction, equipped with column-switching system for the pretreatment of samples, in the determination of 1-hydroxypyrene in the urine from children and pyrene in airborne particulates. We collected both types of samples from areas near a petrochemical industry and rural areas as reference. Samples were first treated with acid hydrolysis and followed by solvent extraction prior to being injected into the separation system for the determination with high performance liquid chromatography and fluorescence.