A Fast-Response Ultraviolet Phototransistor with a PVK QDs/ZnO Nanowire Heterostructure and Its Application in Pharmaceutical Solute Detection.

The sensitivity and photoelectric noise of UV photodetectors are challenges that need to be overcome in pharmaceutical solute detection applications. This paper presents a new device concept for a CsPbBr3 QDs/ZnO nanowire heterojunction structure for phototransistors. The lattice match of the CsPbBr3 QDs and ZnO nanowire reduces the generation of trap centers and avoids carrier absorption by the composite center, which greatly improves the carrier mobility and high detectivity (8.

Localized Surface Plasmon-Enhanced Infrared-to-Visible Upconversion Devices Induced by Ag Nanoparticles.

Upconversion devices (UCDs) have motivated tremendous research interest with their excellent potential and promising application in photovoltaic sensors, semiconductor wafer detection, biomedicine, and light conversion devices, especially near-infrared-(NIR)-to-visible upconversion devices. In this research, a UCD that directly turned NIR light located at 1050 nm into visible light located at 530 nm was fabricated to investigate the underlying working mechanism of UCDs. The simulation and experimental results of this research proved the existence of the quantum tunneling phenomenon in UCDs and found that the quantum tunneling effect can be enhanced by a localized surface plasmon.

Tailoring Nanostructures of Quantum Dots toward Efficient and Stable All-Solution Processed Quantum Dot Light-Emitting Diodes.

Quantum dots (QDs) light-emitting diodes (QLEDs) are considered the most promising candidate for application in displays. While the efficiency of QLEDs has been greatly developed in recent years and is comparable to that of organic light-emitting diodes (OLEDs), it still remains challenging to realize both high efficiency and long lifetimes. In this work, we report efficient and stable red QLEDs with the maximum current efficiency of 13.

Boosting the efficiency of inverted quantum dot light-emitting diodes by balancing charge densities and suppressing exciton quenching through band alignment.

We report an inverted and multilayer quantum dot light emitting diode (QLED) which boosts high efficiency by tuning the energy band alignment between charge transport and light emitting layers. The electron transport layer (ETL) was ZnO nanoparticles (NPs) with an optimized doping concentration of cesium azide (CsN) to effectively reduce electron flow and balance charge injection. This is by virtue of a 0.

High-performance quantum dot light-emitting diodes with hybrid hole transport layer via doping engineering.

Here, we report on the hybrid hole transport materials 4,4'-bis-(carbazole-9-yl)biphenyl (CBP) or poly-N-vinylcarbazole (PVK) doped into poly(4-butyl-phenyl-diphenyl-amine) (Poly-TPD) as the hybrid hole transport layer (HTL) to tailor the energy band alignment between hole injection layer (HIL) and quantum dot (QD) light emitting layer in order to realize efficient quantum dot light emitting diodes (QLEDs) in all solution-processed fabrication. Compared to the pristine Poly-TPD based device, it is found that the electroluminescence (EL) performance of QLEDs can be significantly improved by 1.5 fold via addition of CBP into Poly-TPD, which can be attributed to the lowered highest occupied molecular orbital (HOMO) level of Poly-TPD to reduce the energy barrier between HTL and valance band (VB) of QDs.

Surface plasmon-enhanced quantum dot light-emitting diodes by incorporating gold nanoparticles.

Surface plasmon-enhanced electroluminescence (EL) has been demonstrated by incorporating gold (Au) nanoparticles (NPs) in quantum dot light-emitting diode (QLED). Time-resolved photoluminescence (TRPL) spectroscopy reveals that the EL enhancement is ascribed to the near-field enhancement through an effective coupling between excitons of the quantum dot emitters and localized surface plasmons around Au NPs. It is found that the size of Au NPs and the distance between the Au NPs and the emissive layer have significant effects on the performance of QLED.

High-Performance Photo-Modulated Thin-Film Transistor Based on Quantum dots/Reduced Graphene Oxide Fragment-Decorated ZnO Nanowires.

In this paper, a photo-modulated transistor based on the thin-film transistor structure was fabricated on the flexible substrate by spin-coating and magnetron sputtering. A novel hybrid material that composed of CdSe quantum dots and reduced graphene oxide (RGO) fragment-decorated ZnO nanowires was synthesized to overcome the narrow optical sensitive waveband and enhance the photo-responsivity. Due to the enrichment of the interface and heterostructure by RGO fragments being utilized, the photo-responsivity of the transistor was improved to 2000 A W and the photo-sensitive wavelength was extended from ultraviolet to visible.

Enhanced Photoluminescence Property for Quantum Dot-Gold Nanoparticle Hybrid.

In this paper, we have synthesized ZnCdSeS quantum dots (QDs)-gold nanoparticle (Au NPs) hybrids in aqueous solution via bi-functional linker mercaptoacetic acid (MPA). The absorption peaks of ZnCdSeS QDs and Au are both located at 520 nm. It is investigated that PL intensity of QD-Au hybrid can be affected by the amounts of Au and pH value of hybrid solution.