Radiation-Hardened Position-Sensitive Photodetector Based on Undoped 4H-SiC.

Position-sensitive photodetectors (PSDs) have been widely used for seamless, high-resolution light tracking, but applications such as aerospace and prolonged field operations require stable performance in extreme environments. Conventional PSDs, typically based on the lateral photovoltaic effect of silicon or other semiconductor junctions, are prone to radiation damage and material degradation, limiting their reliability under harsh conditions. Silicon carbide (SiC), with its wide bandgap, high mobility, low defect density, and strong resistance to radiation damage, offers a promising alternative for developing robust detectors.