The continuous advancements in ultraviolet-C (UV-C) optoelectronics are poised to meet the growing demand for efficient and innovative optoelectronic devices, particularly in image sensing and neural communication. This study proposes a low-cost tube sealing and muffle calcination process for the catalyst-free synthesis of polymorphic β-GaO nanomaterials. These nanomaterials are synthesized via a vapor-solid (VS) growth mechanism, enabling the formation of high-quality nanowires (NWs), nanobelts (NBs), and nanosheets (NSs).
View Article and Find Full Text PDFDeveloping high-performance, broad-spectrum ultraviolet photodetectors (PDs) with uniform response is crucial for optoelectronic applications like spectral analysis, optoelectronic logic gates, and multispectral imaging. This study constructs n-n type β-GaO:Si/GaN:Si heterojunction PDs using thermal oxidation, combining the advantages of β-GaO:Si and GaN:Si for excellent broad-spectrum response (UV-A to UV-C). A proposed channel model for GaN:Si oxidation includes hole formation, vortex structure development, channel formation, and grain growth, providing a basis for understanding β-GaO:Si/GaN:Si heterojunction formation.
View Article and Find Full Text PDFUnderwater imaging technology plays a pivotal role in marine exploration and reconnaissance, necessitating photodetectors (PDs) with high responsivity, fast response speed, and low preparation costs. This study presents the synergistic optimization of responsivity and response speed in self-powered photoelectrochemical (PEC)-type photodetector arrays based on oxygen-vacancy-tuned amorphous gallium oxide (a-GaO) thin films, specifically designed for solar-blind underwater detection. Utilizing a low-cost one-step sputtering process with controlled oxygen flow, a-GaO thin films with varying oxygen vacancy (V) concentrations are fabricated.
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