Perioperative, functional, and oncologic outcomes of laparoscopic partial nephrectomy versus open partial nephrectomy for complex renal tumors: a systematic review and meta-analysis.

Background: The primary aim of this present study is to undertake a comprehensive comparative analysis of the perioperative, functional, and oncologic outcomes associated with laparoscopic partial nephrectomy (LPN) and open partial nephrectomy (OPN) as interventions for the treatment of complex renal tumors, defined as PADUA or RENAL score ≥ 7.

Methods: We systematically carried out an extensive search across four electronic databases, namely PubMed, the Cochrane Library, Embase, and Web of Science. Our objective was to identify pertinent studies published in the English language up to December 2023, and encompassed controlled trials comparing LPN and OPN as interventions for complex renal tumors.

Dramatic red fluorescence enhancement and emission red shift of carbon dots following Zn/ZnO decoration.

Metal atom doping, an easy and convenient method, can optimize and tune the physical-chemical properties and photometrics of carbon dots (CDs). However, there are few reports on the preparation of metal-decorated CDs that give red emission and a high photoluminescence quantum yield (PLQY). Here, we demonstrate a zinc (existing in human body) ion-doping strategy to observably enhance the PLQY and lengthen the CD emission wavelength.

Cross-polarization coupling terahertz time-domain spectroscopy in a semiconductor based on the Hall effect.

We propose a new type of terahertz time-domain spectroscopy in an isotropic semiconductor wafer applied by a magnetic field in which two cross-polarization THz pulses couple with each other via the Hall effect. We built a classic theoretic model to describe cross-polarization coupling THz spectroscopy (CPCTS). Numerical simulations show that the magnetic field can clearly affect the spectral features of the two THz pulses via the Hall effect in which both the magnitude and direction of the magnetic field and the thickness of the wafer play important roles.