1D-(GaN/AlN)/2D-Gr/3D-(SiO/Si) Combined High-Performance Flash Memory Device.

Recent advancements have shown that flash memory devices made from entirely two-dimensional (2D) materials exhibit nice performance in terms of storage window, switching speed, and extinction ratio. However, these devices still face challenges such as low carrier density, environmentally sensitive, and difficulty in integration due to the properties of 2D material channels. Here, we propose a novel nonvolatile memory device based on a floating-gate field effect transistor, which integrates one-dimensional (1D) GaN/AlN microwire with 2D few-layer graphene (Gr) to combine the advantages of both materials.

High current density heterojunction bipolar transistors with 3D-GaN/2D-WSe as emitter junctions.

With the continuous advancement of electronic technology, there is an increasing demand for high-speed, high-frequency, and high-power devices. Due to the inherently small thickness and absence of dangling bonds of two-dimensional (2D) materials, heterojunction bipolar transistors (HBTs) based on 2D layered materials (2DLMs) have attracted significant attention. However, the low current density and limited structural design flexibility of 2DLM-based HBT devices currently hinder their applications.