The origin of magnetization-caused increment in water oxidation.

Magnetization promoted activity of magnetic catalysts towards the oxygen evolution reaction (OER) has attracted great attention, but remains a puzzle where the increment comes from. Magnetization of a ferromagnetic material only changes its magnetic domain structure. It does not directly change the spin orientation of unpaired electrons in the material.

Employing defected monolayer MoS as charge storage materials.

Recently, various two-dimensional (2D) materials have been employed in charge trapping memories as the charge trapping layer instead of conventional metal/semiconductor thin films or discrete particles. Such ultra-thin charge trapping layers are beneficial to the development of miniaturized devices, which is a trend in modern semiconductor technology. 2D MoS is an alternative charge trapping material, but previous investigations have been limited to their multilayers.

Mercury (II) adsorption from aqueous solution using nitrogen and sulfur co-doped activated carbon.

Activated carbon (AC) was modified with urea, thioglycolic acid and thiourea to obtain nitrogen doped activated carbon (ACN), sulfur doped activated carbon (ACS) and nitrogen and sulfur co-doped activated carbon (ACNS), respectively. The AC samples were characterized by elemental analysis, N adsorption-desorption, determination of the pH of the point of zero charge (pH) and X-ray photoelectron spectroscopy, and tested for adsorption behaviors of Hg(II) ions. The experimental data of equilibrium isotherms fitted well with the Langmuir model.

Argon Plasma Induced Phase Transition in Monolayer MoS.

In this work, we report a facile, clean, controllable and scalable phase engineering technique for monolayer MoS. We found that weak Ar-plasma bombardment can locally induce 2H→1T phase transition in monolayer MoS to form mosaic structures. These 2H→1T phase transitions are stabilized by point defects (single S-vacancies) and the sizes of induced 1T domains are typically a few nanometers, as revealed by scanning tunneling microscopy measurements.

Precisely Aligned Monolayer MoS Epitaxially Grown on h-BN basal Plane.

Control of the precise lattice alignment of monolayer molybdenum disulfide (MoS ) on hexagonal boron nitride (h-BN) is important for both fundamental and applied studies of this heterostructure but remains elusive. The growth of precisely aligned MoS domains on the basal plane of h-BN by a low-pressure chemical vapor deposition technique is reported. Only relative rotation angles of 0° or 60° between MoS and h-BN basal plane are present.

Rolling Up a Monolayer MoS2 Sheet.

MoS2 nanoscrolls are formed by argon plasma treatment on monolayer MoS2 sheet. The nanoscale scroll formation is attributed to the partial removal of top sulfur layer in MoS2 during the argon plasma treatment process. This convenient, solvent-free, and high-yielding nanoscroll formation technique is also feasible for other 2D transition metal dichalcogenides.

Thermally Induced Graphene Rotation on Hexagonal Boron Nitride.

In this Letter, we report the observation of thermally induced rotation of graphene on hexagonal boron nitride (h-BN). After the rotation, two thermally stable configurations of graphene on h-BN with a relative lattice twisting angle of 0° (most stable) and 30° (metastable), respectively, were found. Graphene on h-BN with a twisting angle below (above) a critical angle of ∼12±2° tends to rotate towards 0° (30°) at a temperature of >100 °C, which is in line with our theoretical simulations.

Nanographene charge trapping memory with a large memory window.

Nanographene is a promising alternative to metal nanoparticles or semiconductor nanocrystals for charge trapping memory. In general, a high density of nanographene is required in order to achieve high charge trapping capacity. Here, we demonstrate a strategy of fabrication for a high density of nanographene for charge trapping memory with a large memory window.

Tunable piezoresistivity of nanographene films for strain sensing.

Graphene-based strain sensors have attracted much attention recently. Usually, there is a trade-off between the sensitivity and resistance of such devices, while larger resistance devices have higher energy consumption. In this paper, we report a tuning of both sensitivity and resistance of graphene strain sensing devices by tailoring graphene nanostructures.

Isolated nanographene crystals for nano-floating gate in charge trapping memory.

Graphene exhibits unique electronic properties, and its low dimensionality, structural robustness, and high work-function make it very promising as the charge storage media for memory applications. Along with the development of miniaturized and scaled up devices, nanostructured graphene emerges as an ideal material candidate. Here we proposed a novel non-volatile charge trapping memory utilizing isolate and uniformly distributed nanographene crystals as nano-floating gate with controllable capacity and excellent uniformity.