High-Pressure-Assisted Large-Area (>2400 mm) Sintered-Silver Substrate Bonding for SiC Power Module Packaging.

The emergence of new semiconductor devices puts forward higher requirements for packaging technology. Sintered silver technology has gradually developed into critical packaging technology in silicon carbide power module packaging due to its good heat dissipation performance and reliability. However, high sintering drive requirements, low sintering densification, and high thermal-mechanical stresses limit the application of sintered silver technology for large-area bonding.