Self-powered and high responsivity photodetector based on a n-Si/p-GaTe heterojunction.

Heterojunction integrated by two-dimensional/three-dimensional materials has shown great potential applications in optoelectronic devices because of its fast response speed, high specific detectivity and broad spectral response. In this work, the vertical n-Si/p-GaTe heterojunction has been designed and fabricated, which shows a high responsivity up to 5.73 A Wand a fast response time of 20s at zero bias benifitting from the high efficiency of light absorption, internal photocurrent gain and strong built-in electrical field.

P-type Doping in Large-Area Monolayer MoS by Chemical Vapor Deposition.

Molybdenum disulfide (MoS) with excellent properties has been widely reported in recent years. However, it is a great challenge to achieve p-type conductivity in MoS because of its native stubborn n-type conductivity. Substitutional transition metal doping has been proved to be an effective approach to tune their intrinsic properties and enhance device performance.

Design of a two-layer structure to significantly improve the performance of zinc oxide resistive memory.

Resistive random access memory (RRAM) is considered to be one of the important candidates for the next generation of memory devices. Zinc oxide resistive memory has also been studied for many years, but there are still some controversial topics and problems. Herein, an unusual resistance state has been observed in devices following the measurement and analysis of ZnO resistive memories with different thicknesses, a middle resistance state was speculated to explain the instability of ZnO RRAM.

Improvement in the quality of black phosphorus by selecting a mineralizer.

The low-cost synthesis of high-quality black phosphorus (BP) has always been a challenge. Herein, we selected different mineralizers to synthesize high-crystallinity BP by the chemical vapor transport (CVT) method and demonstrated that the use of Pb instead of Sn can lead to higher purity BP. Residual Sn in Sn-BP was confirmed by X-ray photoelectron spectroscopy (XPS), but no mineralizer impurity was observed in Pb-BP.

HfO-passivated black phosphorus field effect transistor with long-termed stability and enhanced current on/off ratio.

Enhanced on/off ratio, obvious threshold voltage left shift, newly emerging bipolar field effect performance and most importantly, excellent stability in ambient condition have been reported for the HfO-passivated black phosphorus field effect transistors . Both Raman spectra and x-ray photoelectron spectroscopy (XPS) show a thickness reduction effect after HfO passivation, XPS further demonstrates that the formation of P-Hf and P-O chemical bonds contributes to the thinning of layered black phosphorus (BP), in which P-Hf bonds also provide chemical protection for BP flakes from degradation. Atomic force microscopy measures the thickness of the passivation layer and also verifies the stability of the passivated BP flakes.