Chiral anomaly and Weyl orbit in three-dimensional Dirac semimetal CdAsgrown on Si.

Preparing CdAs, which is a three-dimensional (3D) Dirac semimetal in certain crystal orientation, on Si is highly desirable as such a sample may well be fully compatible with existing Si CMOS technology. However, there is a dearth of such a study regarding CdAsfilms grown on Si showing the chiral anomaly. Here,, we report the novel preparation and fabrication technique of a CdAs(112) film on a Si (111) substrate with a ZnTe (111) buffer layer which explicitly shows the chiral anomaly with a nontrivial Berry's phase of.