Controllable oxygen vacancies to enhance resistive switching performance in a ZrO2-based RRAM with embedded Mo layer.

In this study, the resistive switching characteristics of a ZrO(2)-based memory film with an embedded Mo layer are investigated. The experimental results show that the forming process can be removed by inserting an embedded Mo metal layer within ZrO(2) via a post-annealing process. The excellent memory performance, which includes lower operation voltage (<1.