Reduction of random telegraph noise by high-pressure deuterium annealing for p-type omega-gate nanowire FET.

In this work, we studied the effect of high-pressure deuterium annealing (HPDA) on a p-type omega-gate nanowire field effect transistor by random telegraph noise (RTN) signal analysis. After HPDA under conditions of 400 °C and 10 atm for 30 min, I decreases by 41.2% and I increases by up to 5.

Physics-Based Capacitance Model of Drift Region in Laterally Diffused Metal-Oxide Semiconductor and Its Implementation with BSIM4.

A physical capacitance model is presented for the drift region in a laterally diffused metal-oxide semiconductor (LDMOS). It is derived as a surface-potential-based model of nodal charge for the drift region. The model is combined with BSIM4, which is for the intrinsic MOSFET region of LDMOS, and it is validated with TCAD and measurement data.

A review of recent progress in lens-free imaging and sensing.

Recently, lens-free imaging has evolved as an alternative imaging technology. The key advantages of this technology, including simplicity, compactness, low cost, and flexibility of integration with other components, have facilitated the realization of many innovative applications, especially, in the fields of the on-chip lens-free imaging and sensing. In this review, we discuss the development of lens-free imaging, from theory to applications.

Lens-free shadow image based high-throughput continuous cell monitoring technique.

A high-throughput continuous cell monitoring technique which does not require any labeling reagents or destruction of the specimen is demonstrated. More than 6000 human alveolar epithelial A549 cells are monitored for up to 72 h simultaneously and continuously with a single digital image within a cost and space effective lens-free shadow imaging platform. In an experiment performed within a custom built incubator integrated with the lens-free shadow imaging platform, the cell nucleus division process could be successfully characterized by calculating the signal-to-noise ratios (SNRs) and the shadow diameters (SDs) of the cell shadow patterns.

Flexible glucose sensor using CVD-grown graphene-based field effect transistor.

A flexible glucose sensor using a CVD-grown graphene-based field-effect-transistor (FET) is demonstrated. The CVD-grown graphene was functionalized with linker molecules in order to immobilize the enzymes that induce the catalytic response of glucose. Polyethylene terephthalate (PET) was employed as the substrate material to realize a flexible sensor.