Measuring the Electronic Bandgap of Carbon Nanotube Networks in Non-Ideal Diodes.

The measurement of the electronic bandgap and exciton binding energy in quasi-one-dimensional materials such as carbon nanotubes is challenging due to many-body effects and strong electron-electron interactions. Unlike bulk semiconductors, where the electronic bandgap is well known, the optical resonance in low-dimensional semiconductors is dominated by excitons, making their electronic bandgap more difficult to measure. In this work, we measure the electronic bandgap of networks of polymer-wrapped semiconducting single-walled carbon nanotubes (s-SWCNTs) using non-ideal diodes.

Andreev Reflection and Klein Tunneling in High-Temperature Superconductor-Graphene Junctions.

Scattering processes in quantum materials emerge as resonances in electronic transport, including confined modes, Andreev states, and Yu-Shiba-Rusinov states. However, in most instances, these resonances are driven by a single scattering mechanism. Here, we show the appearance of resonances due to the combination of two simultaneous scattering mechanisms, one from superconductivity and the other from graphene p-n junctions.

All-Carbon Nanotube Solar Cell Devices Mimic Photosynthesis.

Both solar cells and photosynthetic systems employ a two-step process of light absorption and energy conversion. In photosynthesis, they are performed by distinct proteins. However, conventional solar cells use the same semiconductor for optical absorption and electron-hole separation, leading to inefficiencies.

Direct Measurement of the Electron Beam Spatial Intensity Profile via Carbon Nanotube Tomography.

Electron microscopes are ubiquitous across the scientific landscape and have been improved to achieve ever smaller beam spots, a key parameter that determines the instrument's resolution. However, the traditional techniques to characterize the electron beam have limited effectiveness for today's instruments. Consequently, there is an ongoing need to develop detection technologies that can potentially measure the smallest electron beam, which is valuable for the continual advancement of microscope performance.

Tunneling Spectroscopy of Quantum Hall States in Bilayer Graphene p-n Junctions.

We report tunneling transport in spatially controlled networks of quantum Hall (QH) edge states in bilayer graphene. By manipulating the separation, location, and spatial span of QH edge states via gate-defined electrostatics, we observe resonant tunneling between copropagating QH states across incompressible strips. Employing spectroscopic tunneling measurements and an analytical model, we characterize the energy gap, width, density of states, and compressibility of the QH edge states with high precision and sensitivity within the same device.

Gate-Tunable Graphene-WSe Heterojunctions at the Schottky-Mott Limit.

Metal-semiconductor interfaces, known as Schottky junctions, have long been hindered by defects and impurities. Such imperfections dominate the electrical characteristics of the junction by pinning the metal Fermi energy. Here, a graphene-WSe p-type Schottky junction, which exhibits a lack of Fermi level pinning, is studied.

Atomic-Scale Characterization of Graphene p-n Junctions for Electron-Optical Applications.

Graphene p-n junctions offer a potentially powerful approach toward controlling electron trajectories via collimation and focusing in ballistic solid-state devices. The ability of p-n junctions to control electron trajectories depends crucially on the doping profile and roughness of the junction. Here, we use four-probe scanning tunneling microscopy and spectroscopy (STM/STS) to characterize two state-of-the-art graphene p-n junction geometries at the atomic scale, one with CMOS polySi gates and another with naturally cleaved graphite gates.

Two-Parameter Quasi-Ballistic Transport Model for Nanoscale Transistors.

We show that by adding only two fitting parameters to a purely ballistic transport model, we can accurately characterize the current-voltage characteristics of nanoscale MOSFETs. The model is an extension of Natori's model and includes transmission probability and drain-channel coupling parameter. The latter parameter gives rise to a theoretical R that is significantly larger than those predicted previously.

Three fundamental devices in one: a reconfigurable multifunctional device in two-dimensional WSe.

The three pillars of semiconductor device technologies are (1) the p-n diode, (2) the metal-oxide-semiconductor field-effect transistor and (3) the bipolar junction transistor. They have enabled the unprecedented growth in the field of information technology that we see today. Until recently, the technological revolution for better, faster and more efficient devices has been governed by scaling down the device dimensions following Moore's Law.

Large Bandgap Shrinkage from Doping and Dielectric Interface in Semiconducting Carbon Nanotubes.

The bandgap of a semiconductor is one of its most important electronic properties. It is often considered to be a fixed property of the semiconductor. As the dimensions of semiconductors reduce, however, many-body effects become dominant.

Bipolar Junction Transistors in Two-Dimensional WSe2 with Large Current and Photocurrent Gains.

In the development of semiconductor devices, the bipolar junction transistor (BJT) features prominently as being the first solid state transistor that helped to usher in the digital revolution. For any new semiconductor, therefore, the fabrication and characterization of the BJT are important for both technological importance and historical significance. Here, we demonstrate a BJT device in exfoliated TMD semiconductor WSe2.

Ideal graphene/silicon Schottky junction diodes.

The proper understanding of semiconductor devices begins at the metal-semiconductor interface. The metal/semiconductor interface itself can also be an important device, as Schottky junctions often forms when the doping in the semiconductors is low. Here, we extend the analysis of metal-silicon Schottky junctions by using graphene, an atomically thin semimetal.

Electronic excitations in graphene in the 1-50 eV range: the π and π + σ peaks are not plasmons.

The field of plasmonics relies on light coupling strongly to plasmons as collective excitations. The energy loss function of graphene is dominated by two peaks at ∼5 and ∼15 eV, known as π and π + σ plasmons, respectively. We use electron energy-loss spectroscopy in an aberration-corrected scanning transmission electron microscope and density functional theory to show that between 1 to 50 eV, these prominent π and π + σ peaks are not plasmons, but single-particle interband excitations.

Quantum efficiency and capture cross section of first and second excitonic transitions of single-walled carbon nanotubes measured through photoconductivity.

Comparing photoconductivity measurements, using p-n diodes formed along individual single-walled carbon nanotubes (SWNT), with modeling results, allows determination of the quantum efficiency, optical capture cross section, and oscillator strength of the first (E11) and second (E22) excitonic transitions of SWNTs. This is in the infrared region of the spectrum, where little experimental work on SWNT optical absorption has been reported to date. We estimate quantum efficiency (η) ~1-5% and provide a correlation of η, capture cross section, and oscillator strength for E11 and E22 with nanotube diameter.

Enhanced optical second-harmonic generation from the current-biased graphene/SiO2/Si(001) structure.

We find that optical second-harmonic generation (SHG) in reflection from a chemical-vapor-deposition graphene monolayer transferred onto a SiO2/Si(001) substrate is enhanced about 3 times by the flow of direct current electric current in graphene. Measurements of rotational-anisotropy SHG revealed that the current-induced SHG from the current-biased graphene/SiO2/Si(001) structure undergoes a phase inversion as the measurement location on graphene is shifted laterally along the current flow direction. The enhancement is due to current-associated charge trapping at the graphene/SiO2 interface, which introduces a vertical electric field across the SiO2/Si interface that produces electric field-induced SHG.

Observation of the urbach tail in the effective density of States in carbon nanotubes.

While a number of studies have reported evidence of localized states in carbon nanotube devices, the density distribution of these states has not been reported until now. By measuring trap emission current in carbon nanotube field-effect transistors, we observe a prominent exponential tail in the density of states near the band edge. Since continuous distributions of localized states are typically associated with highly disordered systems, this observation was quite unexpected in carbon nanotubes, which are nearly ideal crystals.

Measuring carbon nanotube band gaps through leakage current and excitonic transitions of nanotube diodes.

The band gap of a semiconductor is one of its most fundamental properties. It is one of the defining parameters for applications, including nanoelectronic and nanophotonic devices. Measuring the band gap, however, has received little attention for quasi-one-dimensional materials, including single-walled carbon nanotubes.