Enhanced Oxidation Resistance and Interface Stability of Atomic-Layer-Deposited MoN Electrodes via TiN Passivation for DRAM Cell Capacitor Applications.

The continuous miniaturization of dynamic random-access memory (DRAM) capacitors has amplified the demand for electrode materials featuring specific characteristics, such as low resistivity, high work function, chemical stability, excellent interface quality with high-k dielectrics, and superior mechanical properties. In this study, molybdenum nitride (MoN) films were deposited using a plasma-enhanced atomic layer deposition (PEALD) employing bis(isopropylcyclopentadienyl)molybdenum(IV) dihydride and NH plasma for DRAM capacitor electrode applications. Depending on the deposition temperatures of the PEALD MoN films ranging from 200 to 400 °C, the Mo/N ratio and crystal structure varied, transitioning from the cubic NaCl-B1-type MoN phase with Mo/N ratio of 1.