A Hierarchical Metal Nanowire Network Structure for Durable, Cost-Effective, Stretchable, and Breathable Electronics.

Polymer nanofiber-based porous structures ("breathable devices") have been developed for breathable epidermal electrodes, piezoelectric nanogenerators, temperature sensors, and strain sensors, but their applications are limited because increasing the porosity reduces device robustness. Herein, we report an approach to produce ultradurable, cost-effective breathable electronics using a hierarchical metal nanowire network and an optimized photonic sintering process. Photonic sintering significantly reduces the sheet resistance (16.

All-Organic, Solution-Processed, Extremely Conformal, Mechanically Biocompatible, and Breathable Epidermal Electrodes.

Conformal integration of an epidermal device with the skin, as well as sweat and air permeability, are crucial to reduce stress on biological tissues. Nanofiber-based porous mesh structures (breathable devices) are commonly utilized to prevent skin problems. Noble metals are normally deposited on nanomesh substrates to form breathable electrodes.

Transition States of Nanocrystal Thin Films during Ligand-Exchange Processes for Potential Applications in Wearable Sensors.

Ligand exchange is an advanced technique for tuning the various properties of nanocrystal (NC) thin films, widely used in the NC thin-film device applications. Understanding how the NC thin films transform into functional thin-film devices upon ligand exchange is essential. Here, we investigated the process of structural transformation and accompanying property changes in the NC thin films, by monitoring the various characteristics of silver (Ag) NC thin films at each stage of the ligand-exchange process.

3 D Network-Structured Crumpled Graphene/Carbon Nanotube/Polyaniline Composites for Supercapacitors.

Crumpled graphene (CGR) is considered a promising supercapacitor material to achieve high power and energy density because it could overcome the disadvantages of 2 D GR sheets such as aggregation during the electrode fabrication process, reduction of the available surface area, and limitation of the electron and ion transport. Even though CGR shows good results, carbon materials are limited in terms of their capacitance performance. Here, we report highly enhanced supercapacitor materials by fabricating a 3 D composite containing CGR, carbon nanotubes (CNTs), and polyaniline (PANI).

One-Step Synthesis of Pt/Graphene Composites from Pt Acid Dissolved Ethanol via Microwave Plasma Spray Pyrolysis.

Pt nanoparticles-laden graphene (Pt/GR) composites were synthesized in the gas phase from a mixture of ethanol and Pt precursor by microwave plasma spray pyrolysis. The morphology of Pt/GR composites has the shape of wrinkled sheets of paper, while Pt nanoparticles (Pt NPs) that are less than 2.6 nm in the mean diameter are uniformly well deposited on the surface of GR sheets stacked in only three layers.

Exploiting the colloidal nanocrystal library to construct electronic devices.

Synthetic methods produce libraries of colloidal nanocrystals with tunable physical properties by tailoring the nanocrystal size, shape, and composition. Here, we exploit colloidal nanocrystal diversity and design the materials, interfaces, and processes to construct all-nanocrystal electronic devices using solution-based processes. Metallic silver and semiconducting cadmium selenide nanocrystals are deposited to form high-conductivity and high-mobility thin-film electrodes and channel layers of field-effect transistors.

Selective p- and n-Doping of Colloidal PbSe Nanowires To Construct Electronic and Optoelectronic Devices.

We report the controlled and selective doping of colloidal PbSe nanowire arrays to define pn junctions for electronic and optoelectronic applications. The nanowires are remotely doped through their surface, p-type by exposure to oxygen and n-type by introducing a stoichiometric imbalance in favor of excess lead. By employing a patternable poly(methyl)methacrylate blocking layer, we define pn junctions in the nanowires along their length.

Aerosol-assisted extraction of silicon nanoparticles from wafer slicing waste for lithium ion batteries.

A large amount of silicon debris particles are generated during the slicing of silicon ingots into thin wafers for the fabrication of integrated-circuit chips and solar cells. This results in a significant loss of valuable materials at about 40% of the mass of ingots. In addition, a hazardous silicon sludge waste is produced containing largely debris of silicon, and silicon carbide, which is a common cutting material on the slicing saw.

Engineering charge injection and charge transport for high performance PbSe nanocrystal thin film devices and circuits.

We study charge injection and transport in PbSe nanocrystal thin films. By engineering the contact metallurgy and nanocrystal ligand exchange chemistry and surface passivation, we demonstrate partial Fermi-level pinning at the metal-nanocrystal interface and an insulator-to-metal transition with increased coupling and doping, allowing us to design high conductivity and mobility PbSe nanocrystal films. We construct complementary nanocrystal circuits from n-type and p-type transistors realized from a single nanocrystal material by selecting the contact metallurgy.

Gate-induced carrier delocalization in quantum dot field effect transistors.

We study gate-controlled, low-temperature resistance and magnetotransport in indium-doped CdSe quantum dot field effect transistors. We show that using the gate to accumulate electrons in the quantum dot channel increases the "localization product" (localization length times dielectric constant) describing transport at the Fermi level, as expected for Fermi level changes near a mobility edge. Our measurements suggest that the localization length increases to significantly greater than the quantum dot diameter.

Designing high-performance PbS and PbSe nanocrystal electronic devices through stepwise, post-synthesis, colloidal atomic layer deposition.

We report a simple, solution-based, postsynthetic colloidal, atomic layer deposition (PS-cALD) process to engineer stepwise the surface stoichiometry and therefore the electronic properties of lead chalcogenide nanocrystal (NC) thin films integrated in devices. We found that unlike chalcogen-enriched NC surfaces that are structurally, optically, and electronically unstable, lead chloride treatment creates a well-passivated shell that stabilizes the NCs. Using PS-cALD of lead chalcogenide NC thin films we demonstrate high electron field-effect mobilities of ∼4.

In situ repair of high-performance, flexible nanocrystal electronics for large-area fabrication and operation in air.

Colloidal semiconductor nanocrystal (NC) thin films have been integrated in light-emitting diodes, solar cells, field-effect transistors (FETs), and flexible, electronic circuits. However, NC devices are typically fabricated and operated in an inert environment since the reactive surface and high surface-to-volume ratio of NC materials render them sensitive to oxygen, water, and many solvents. This sensitivity has limited device scaling and large-scale device integration achievable by conventional fabrication technologies, which generally require ambient air and wet-chemical processing.

Stoichiometric control of lead chalcogenide nanocrystal solids to enhance their electronic and optoelectronic device performance.

We investigate the effects of stoichiometric imbalance on the electronic properties of lead chalcogenide nanocrystal films by introducing excess lead (Pb) or selenium (Se) through thermal evaporation. Hall-effect and capacitance-voltage measurements show that the carrier type, concentration, and Fermi level in nanocrystal solids may be precisely controlled through their stoichiometry. By manipulating only the stoichiometry of the nanocrystal solids, we engineer the characteristics of electronic and optoelectronic devices.

Bandlike transport in strongly coupled and doped quantum dot solids: a route to high-performance thin-film electronics.

We report bandlike transport in solution-deposited, CdSe QD thin-films with room temperature field-effect mobilities for electrons of 27 cm(2)/(V s). A concomitant shift and broadening in the QD solid optical absorption compared to that of dispersed samples is consistent with electron delocalization and measured electron mobilities. Annealing indium contacts allows for thermal diffusion and doping of the QD thin-films, shifting the Fermi energy, filling traps, and providing access to the bands.

Fabrication and characterization of vertically aligned long ZnO nanorods on transparent substrate.

Vertically aligned long ZnO nanorods (NRs) were grown by metal organic chemical vapor deposition (MOCVD) technique. Prior to the NRs growth Ga-doped ZnO (GZO) film was deposited by DC sputtering technique on glass substrates. The length and width of the NRs were 25 microm and 450-500 nm, respectively.

One-dimensional semiconductor nanostructure based thin-film partial composite formed by transfer implantation for high-performance flexible and printable electronics at low temperature.

Having high bending stability and effective gate coupling, the one-dimensional semiconductor nanostructures (ODSNs)-based thin-film partial composite was demonstrated, and its feasibility was confirmed through fabricating the Si NW thin-film partial composite on the poly(4-vinylphenol) (PVP) layer, obtaining uniform and high-performance flexible field-effect transistors (FETs). With the thin-film partial composite optimized by controlling the key steps consisting of the two-dimensional random dispersion on the hydrophilic substrate of ODSNs and the pressure-induced transfer implantation of them into the uncured thin dielectric polymer layer, the multinanowire (NW) FET devices were simply fabricated. As the NW density increases, the on-current of NW FETs increases linearly, implying that uniform NW distribution can be obtained with random directions over the entire region of the substrate despite the simplicity of the drop-casting method.

Biomimetic hierarchical ZnO structure with superhydrophobic and antireflective properties.

A two step method, with a combination of top-down and bottom-up approaches, was developed for the fabrication of ZnO based hierarchical structures with nanorods on microcraters. A layer of well c-axis aligned, transparent, conductive ZnO thin film was deposited by pulsed DC sputtering on a Corning glass substrate. The microcraters were created with anisotropic etching on the as-deposited ZnO thin film.

Programmable direct-printing nanowire electronic components.

In order for recently developed advanced nanowire (NW) devices(1-5) to be produced on a large scale, high integration of the separately fabricated nanoscale devices into intentionally organized systems is indispensible. We suggest a unique fabrication route for semiconductor NW electronics. This route provides a high yield and a large degree of freedom positioning the device on the substrate.

Low-power operation of vertically aligned liquid-crystal system via anatase-TiO(2) nanoparticle dispersion.

Electro-optic performance of a liquid-crystal (LC) system is enhanced by TiO(2) nanoparticle dispersed in nematic liquid crystal (NLC). The 2.5 V threshold voltage of LC for device operation is lowered to 0.