Characterization of Luminescent Down-Shifting Spectral Conversion Effects on Silicon Solar Cells with Various Combinations of Eu-Doped Phosphors.

Luminescent down-shifting (LDS) spectral conversion is a feasible approach to enhancing the short-wavelength response of single junction solar cells. This paper presents the optical and electrical characteristics of LDS spectral conversion layers containing a single species or two species of Eu-doped phosphors applied to the front surface of silicon solar cells via spin-on coating. The chemical composition, surface morphology, and fluorescence emission of the LDS layers were respectively characterized using energy-dispersive X-ray analysis, optical imaging, and photoluminescence measurements.

Characterization of Plasmonic Scattering, Luminescent Down-Shifting, and Metal-Enhanced Fluorescence and Applications on Silicon Solar Cells.

This paper studied characterized the plasmonic effects of silver nanoparticles (Ag-NPs), the luminescent down-shifting of Eu-doped phosphor particles, and the metal-enhanced fluorescence (MEF) achieved by combining the two processes to enhance the conversion efficiency of silicon solar cells. We obtained measurements of photoluminescence (PL) and external quantum efficiency (EQE) at room temperature to determine whether the fluorescence emissions intensity of Eu-doped phosphor was enhanced or quenched by excitation induced via surface plasmon resonance (SPR). Overall, fluorescence intensity was enhanced when the fluorescence emission band was strongly coupled to the SPR band of Ag-NPs and the two particles were separated by a suitable distance.

Enhancing Photovoltaic Performance of GaAs Single-Junction Solar Cells by Applying a Spectral Conversion Layer Containing Eu-Doped and Yb/Er-Doped Phosphors.

In this study, we examined efforts to increase the photovoltaic performance of GaAs single-junction solar cells using spectral conversion layers, respectively, composed of europium-doped (Eu-doped) phosphors, ytterbium/erbium-doped (Yb/Er-doped) phosphors, and a combination of Eu-doped and Yb/Er-doped phosphors. Spin-on film deposition was used to apply the conversion layers, all of which had a total phosphor concentration of 3 wt%. The chemical compositions of the phosphors were examined by energy-dispersive X-ray spectroscopy.

The Fabrication and Characterization of InAlAs/InGaAs APDs Based on a Mesa-Structure with Polyimide Passivation.

This paper presents a novel front-illuminated InAlAs/InGaAs separate absorption, grading, field-control and multiplication (SAGFM) avalanche photodiodes (APDs) with a mesa-structure for high speed response. The electric fields in the InAlAs-multiplication layer and InGaAs-absorption layer enable high multiplication gain and high-speed response thanks to the thickness and concentration of the field-control and multiplication layers. A mesa active region of 45 micrometers was defined using a bromine-based isotropic wet etching solution.

Enhancing Photovoltaic Performance of Plasmonic Silicon Solar Cells with ITO Nanoparticles Dispersed in SiO Anti-Reflective Layer.

In this study, we sought to enhance the photovoltaic performance of silicon solar cells by coating them (via the spin-on film technique) with a layer of SiO containing plasmonic indium-tin-oxide nanoparticles (ITO-NPs) of various concentrations. We demonstrated that the surface plasmon resonance absorption, surface morphology, and transmittance of the ITO-NPs dispersed in SiO layer at various concentrations (1-7 wt%). We also assessed the plasmonic scattering effects of ITO-NPs within a layer of SiO with and without a sub-layer of ITO in terms of optical reflectance, external quantum efficiency, and photovoltaic current-voltage under air mass (AM) 1.

Enhancing Output Power of Textured Silicon Solar Cells by Embedding Indium Plasmonic Nanoparticles in Layers within Antireflective Coating.

In this study, we sought to enhance the output power and conversion efficiency of textured silicon solar cells by layering two-dimensional indium nanoparticles (In NPs) within a double-layer (SiN/SiO₂) antireflective coating (ARC) to induce plasmonic forward scattering. The plasmonic effects were characterized using Raman scattering, absorbance spectra, optical reflectance, and external quantum efficiency. We compared the optical and electrical performance of cells with and without single layers and double layers of In NPs.

Fabrication and Characterization of Planar-Type Top-Illuminated InP-Based Avalanche Photodetector on Conductive Substrate with Operating Speeds Exceeding 10 Gbps.

This paper presents a high-speed top-illuminated InP-based avalanche photodetector (APD) fabricated on conductive InP-wafer using planar processes. The proposed device was then evaluated in terms of DC and dynamic performance characteristics. The design is based on a separate absorption, grading, charge, and multiplication (SAGCM) epitaxial-structure.

Photovoltaic Performance Enhancement of Silicon Solar Cells Based on Combined Ratios of Three Species of Europium-Doped Phosphors.

This paper presents a scheme for the enhancement of silicon solar cells in terms of luminescent emission band and photovoltaic performance. The proposed devices are coated with an luminescent down-shifting (LDS) layer comprising three species of europium (Eu)-doped phosphors mixed within a silicate film (SiO₂) using a spin-on film deposition. The three species of phosphor were mixed at ratios of 0.

Enhancing Photovoltaic Performance Using Broadband Luminescent Down-Shifting by Combining Multiple Species of Eu-Doped Silicate Phosphors.

This paper demonstrates the application of a broadband luminescent downshifting (LDS) layer with multiple species of europium (Eu)-doped silicate phosphors using spin-on film technique to enhance the photovoltaic efficiency of crystalline silicon solar cells. The surface morphology of the deposited layer was examined using a scanning electron microscope (SEM). The chemical composition of the Eu-doped silicate phosphors was analyzed using energy-dispersive X-ray spectroscopy (EDS).

Plasmonic Light Scattering in Textured Silicon Solar Cells with Indium Nanoparticles from Normal to Non-Normal Light Incidence.

In this study, we sought to improve the light trapping of textured silicon solar cells using the plasmonic light scattering of indium nanoparticles (In NPs) of various dimensions. The light trapping modes of textured-silicon surfaces with and without In NPs were investigated at an angle of incidence (AOI) ranging from 0° to 75°. The optical reflectance, external quantum efficiency (EQE), and photovoltaic performance were first characterized under an AOI of 0°.

Electrical and Optical Characterization of Sputtered Silicon Dioxide, Indium Tin Oxide, and Silicon Dioxide/Indium Tin Oxide Antireflection Coating on Single-Junction GaAs Solar Cells.

This study characterized the electrical and optical properties of single-junction GaAs solar cells coated with antireflective layers of silicon dioxide (SiO₂), indium tin oxide (ITO), and a hybrid layer of SiO₂/ITO applied using Radio frequency (RF) sputtering. The conductivity and transparency of the ITO film were characterized prior to application on GaAs cells. Reverse saturation-current and ideality factor were used to evaluate the passivation performance of the various coatings on GaAs solar cells.

Photovoltaic Performance Characterization of Textured Silicon Solar Cells Using Luminescent Down-Shifting Eu-Doped Phosphor Particles of Various Dimensions.

This paper reports on efforts to enhance the photovoltaic performance of textured silicon solar cells through the application of a layer of Eu-doped silicate phosphor with particles of various dimensions using the spin-on film technique. We examined the surface profile and dimensions of the Eu-doped phosphors in the silicate layer using optical microscopy with J-image software. Optical reflectance, photoluminescence, and external quantum efficiency were used to characterize the luminescent downshifting (LDS) and light scattering of the Eu-doped silicate phosphor layer.