The application of hydrogen flooding was recently shown to be a simple and effective approach for improved layer differentiation and interface determination during secondary ion mass spectrometry (SIMS) depth profiling of thin films, as well as an approach with potential in the field of quantitative SIMS analyses. To study the effects of hydrogen further, flooding of H molecules was compared to reactions with atomic H on samples of pure metals and their alloys. H was introduced into the analytical chamber via a capillary, which was heated to approximately 2200 K to achieve dissociation.
View Article and Find Full Text PDFCalorimetry is a commonly used method in plasma characterization, but the accuracy of the method is tied to the accuracy of the recombination coefficient, which in turn depends on a number of surface effects. Surface effects also govern the kinetics in advanced methods such as atomic layer oxidation of inorganic materials and functionalization of organic materials. The flux of the reactive oxygen atoms for the controlled oxidation of such materials depends on the recombination coefficient of materials placed into the reaction chamber, which in turn depends on the surface morphology, temperature, and pressure in the processing chamber.
View Article and Find Full Text PDFThe influence of H flooding on the development of surface roughness during time-of-flight secondary ion mass spectrometry (ToF-SIMS) depth profiling was studied to evaluate the different aspects of a H atmosphere in comparison to an ultrahigh vacuum (UHV) environment. Multilayer samples, consisting of different combinations of metal, metal oxide, and alloy layers of different elements, were bombarded with 1 and 2 keV Cs ion beams in UHV and a H atmosphere of 7 × 10 mbar. The surface roughness was measured with atomic force microscopy (AFM) on the initial surface and in the craters formed while sputtering, either in the middle of the layers or at the interfaces.
View Article and Find Full Text PDFThis work explores the possibility of depth profiling of inorganic materials with Megaelectron Volt Secondary Ion Mass Spectrometry using low energy primary ions (LE MeV SIMS), specifically 555 keV Cu, while etching the surface with 1 keV Ar ions. This is demonstrated on a dual-layer sample consisting of 50 nm Cr layer deposited on 150 nm InOSn (ITO) glass. These materials proved to have sufficient secondary ion yield in previous studies using copper ions with energies of several hundred keV.
View Article and Find Full Text PDFJ Am Soc Mass Spectrom
January 2022
The influence of the flooding gas during ToF-SIMS depth profiling was studied to reduce the matrix effect and improve the quality of the depth profiles. The profiles were measured on three multilayered samples prepared by PVD. They were composed of metal, metal oxide, and alloy layers.
View Article and Find Full Text PDFCellulose is a promising biomass material suitable for high volume applications. Its potential lies in sustainability, which is becoming one of the leading trends in industry. However, there are certain drawbacks of cellulose materials which limit their use, especially their high wettability and low barrier properties, which can be overcome by applying thin coatings.
View Article and Find Full Text PDFPolymers (Basel)
November 2020
Defluorination of polytetrafluoroethylene (PTFE) surface film is a suitable technique for tailoring its surface properties. The influence of discharge parameters on the surface chemistry was investigated systematically using radio-frequency inductively coupled H plasma sustained in the E- and H-modes at various powers, pressures and treatment times. The surface finish was probed by X-ray photoelectron spectroscopy (XPS) and time-of-flight secondary ion mass spectrometry (ToF-SIMS).
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