Voltage-reduced low-defect graphene oxide: a high conductivity, near-zero temperature coefficient of resistance material.

A highly conductive graphene derivative was produced by using a low-defect form of graphene oxide, oxo-G, in conjunction with voltage-reduction, a simple and environmentally-benign procedure for removing oxygen-containing functional groups. A low temperature coefficient of resistance was achieved, making this material promising for temperature-stable electronics and sensors.

An air gap moderates the performance of nanowire array transistors.

Solution-processed nanowires are promising for low-cost and flexible electronics. When depositing nanowires from solution, due to stacking of the nanowires, an air gap exists between the substrate and much of the active material. Here, using confocal Raman spectroscopy, we quantify the thickness of the air gap in transistors comprising organic semiconductor nanowires.