Phenomenological modelling of non-volatile memory threshold voltage shift induced by nonlinear ionization with a femtosecond laser.

The behaviour of semiconductor materials and devices subjected to femtosecond laser irradiation has been under scrutiny, for many reasons, during the last decade. In particular, recent works have shown that the specific functionality and/or geometry of semiconductor devices, among which non-volatile memory (NVM) devices hold a special place, could be used to improve the knowledge about ultrafast laser-semiconductor interactions. So far, such an approach has been applied to draw conclusions about the spatio-temporal properties of laser propagation in bulk materials.