Modeling with graded interfaces: Tool for understanding and designing record-high power and efficiency mid-infrared quantum cascade lasers.

By employing a graded-interfaces model based on a generalized formalism for interface-roughness (IFR) scattering that was modified for mid-infrared emitting quantum cascade lasers (QCLs), we have accurately reproduced the electro-optical characteristics of published record-performance 4.9 µm- and 8.3 µm-emitting QCLs.

Terahertz difference-frequency-generation quantum cascade lasers on silicon with wire grid current injectors.

We propose the concept and experimentally verify the operation of terahertz quantum cascade laser sources based on intra-cavity Cherenkov difference-frequency generation on a silicon substrate with the current injection layer configured as a metal wire grid. Such a current injector configuration enables high transmission of TM-polarized terahertz radiation into the silicon substrate while simultaneously providing a low-resistivity metal contact for current injection.

Beam stability of buried-heterostructure quantum cascade lasers employing HVPE regrowth.

Measurements of beam stability for mid-infrared (IR)-emitting quantum cascade lasers (QCLs) are important for applications that require the beam to travel through air to remote targets, such as free-space communication links. We report beam-quality measurement results of narrow-ridge, 4.6 µm-emitting buried-heterostructure (BH) QCLs fabricated using ICP etching and HVPE regrowth.

86% internal differential efficiency from 8 to 9 µm-emitting, step-taper active-region quantum cascade lasers.

8.4 μm-emitting quantum cascade lasers (QCLs) have been designed to have, right from threshold, both carrier-leakage suppression and miniband-like carrier extraction. The slope-efficiency characteristic temperature T, the signature of carrier-leakage suppression, is found to be 665 K.

Facet-embedded thin-film III-V edge-emitting lasers integrated with SU-8 waveguides on silicon.

A thin-film InGaAs/GaAs edge-emitting single-quantum-well laser has been integrated with a tapered multimode SU-8 waveguide onto an Si substrate. The SU-8 waveguide is passively aligned to the laser using mask-based photolithography, mimicking electrical interconnection in Si complementary metal-oxide semiconductor, and overlaps one facet of the thin-film laser for coupling power from the laser to the waveguide. Injected threshold current densities of 260A/cm(2) are measured with the reduced reflectivity of the embedded laser facet while improving single mode coupling efficiency, which is theoretically simulated to be 77%.

Low-threshold thin-film III-V lasers bonded to silicon with front and back side defined features.

A III-V thin-film single-quantum-well edge-emitting laser is patterned on both sides of the epitaxial layer and bonded to silicon. Injected threshold current densities of 420 A/cm(2) for gain-guided lasers with bottom p-stripes and top n-stripes and 244 A/cm(2) for index-guided bottom p-ridge and top n-stripe lasers are measured with a lasing wavelength of approximately 995 nm. These threshold current densities, among the lowest for thin-film edge-emitting lasers on silicon reported to date (to our knowledge), enable the implementation of integrated applications such as power-efficient portable chip-scale photonic sensing systems.