Modeling with graded interfaces: Tool for understanding and designing record-high power and efficiency mid-infrared quantum cascade lasers.

By employing a graded-interfaces model based on a generalized formalism for interface-roughness (IFR) scattering that was modified for mid-infrared emitting quantum cascade lasers (QCLs), we have accurately reproduced the electro-optical characteristics of published record-performance 4.9 µm- and 8.3 µm-emitting QCLs.

Terahertz difference-frequency-generation quantum cascade lasers on silicon with wire grid current injectors.

We propose the concept and experimentally verify the operation of terahertz quantum cascade laser sources based on intra-cavity Cherenkov difference-frequency generation on a silicon substrate with the current injection layer configured as a metal wire grid. Such a current injector configuration enables high transmission of TM-polarized terahertz radiation into the silicon substrate while simultaneously providing a low-resistivity metal contact for current injection.

Beam stability of buried-heterostructure quantum cascade lasers employing HVPE regrowth.

Measurements of beam stability for mid-infrared (IR)-emitting quantum cascade lasers (QCLs) are important for applications that require the beam to travel through air to remote targets, such as free-space communication links. We report beam-quality measurement results of narrow-ridge, 4.6 µm-emitting buried-heterostructure (BH) QCLs fabricated using ICP etching and HVPE regrowth.

86% internal differential efficiency from 8 to 9 µm-emitting, step-taper active-region quantum cascade lasers.

8.4 μm-emitting quantum cascade lasers (QCLs) have been designed to have, right from threshold, both carrier-leakage suppression and miniband-like carrier extraction. The slope-efficiency characteristic temperature T, the signature of carrier-leakage suppression, is found to be 665 K.