Two-dimensional simulation and modeling in scanning electron microscope imaging and metrology research.

Traditional Monte Carlo modeling of the electron beam-specimen interactions in a scanning electron microscope (SEM) produces information about electron beam penetration and output signal generation at either a single beam-landing location, or multiple landing positions. If the multiple landings lie on a line, the results can be graphed in a line scan-like format. Monte Carlo results formatted as line scans have proven useful in providing one-dimensional information about the sample (e.

X-Ray Lithography Mask Metrology: Use of Transmitted Electrons in an SEM for Linewidth Measurement.

X-ray masks present a measurement object that is different from most other objects used in semiconductor processing because the support membrane is, by design, x-ray transparent. This characteristic can be used as an advantage in electron beam-based x-ray mask metrology since, depending upon the incident electron beam energies, substrate composition and substrate thickness, the membrane can also be essentially electron transparent. The areas of the mask where the absorber structures are located are essentially x-ray opaque, as well as electron opaque.