The recent prediction of the new magnetic class, altermagnetism, has drawn considerable interest, fueled by its potential to host novel phenomena and to be utilized in next-generation spintronics devices. Among many promising candidates, rutile RuO is a prototypical candidate for realizing the prospects of altermagnetism. However, the experimental studies on RuO are still in the early stages.
View Article and Find Full Text PDFWeyl fermions can exhibit exotic phenomena due to their magnetic charge in momentum space, while Weyl nodes are usually located away from Fermi energy, which forms electron or hole pockets as the electric charges. Previous studies have mostly focused on the magnetic charge, however, the electric charges are rarely explored. Here, the intriguing Hall responses arising from the interplay between magnetic and electric charges of Weyl fermions in pyrochlore iridates are reported.
View Article and Find Full Text PDFHund's rule coupling (J) has attracted much attention recently for its role in the description of the novel quantum phases of multi-orbital materials. Depending on the orbital occupancy, J can lead to various intriguing phases. However, experimental confirmation of the orbital occupancy dependency has been difficult as controlling the orbital degrees of freedom normally accompanies chemical inhomogeneities.
View Article and Find Full Text PDFThis study was conducted to demonstrate the therapeutic effect of soft-tissue mobilization (STM) combined with pain neuroscience education (PNE) for patients with chronic nonspecific low back pain with central sensitization. A total of 28 participants were recruited and randomly allocated to either the STM group (SMG) ( = 14) or the STM plus PNE group (BG; blended group) ( = 14). STM was applied twice a week for four weeks, with a total of eight sessions, and PNE was applied within four weeks, for a total of two sessions.
View Article and Find Full Text PDFThe oxide interfaces between materials with different structural symmetries have been actively studied due to their novel physical properties. However, the investigation of intriguing interfacial phenomena caused by the oxygen octahedral tilt (OOT) proximity effect has not been fully exploited, as there is still no clear understanding of what determines the proximity length and what the underlying control mechanism is. Here, we achieved scalability of the OOT proximity effect in SrRuO (SRO) by epitaxial strain near the SRO/SrTiO heterointerface.
View Article and Find Full Text PDFAntiferromagnetic (AFM) materials are attracting tremendous attention due to their spintronic applications and associated novel topological phenomena. However, detecting and identifying the spin configurations in AFM materials are quite challenging due to the absence of net magnetization. Herein, we report the practicality of utilizing the planar Hall effect (PHE) to detect and distinguish "cluster magnetic multipoles" in AFM NdIrO (NIO-227) fully strained films.
View Article and Find Full Text PDFCorrelated topological phases (CTPs) with interplay between topology and electronic correlations have attracted tremendous interest in condensed matter physics. Therein, correlated Weyl semimetals (WSMs) are rare in nature and, thus, have so far been less investigated experimentally. In particular, the experimental realization of the interacting WSM state with logarithmic Fermi velocity renormalization has not been achieved yet.
View Article and Find Full Text PDFThe recent observation of the anomalous Hall effect (AHE) without notable magnetization in antiferromagnets has suggested that ferromagnetic ordering is not a necessary condition. Thus, recent theoretical studies have proposed that higher-rank magnetic multipoles formed by clusters of spins (cluster multipoles) can generate the AHE without magnetization. Despite such an intriguing proposal, controlling the unconventional AHE by inducing these cluster multipoles has not been investigated.
View Article and Find Full Text PDFWe studied the impact of H pressure during post-metallization annealing on the chemical composition of a HfO/AlO gate stack on a HCl wet-cleaned InGaAs substrate by comparing the forming gas annealing (at atmospheric pressure with a H partial pressure of 0.04 bar) and H high-pressure annealing (H-HPA at 30 bar) methods. In addition, the effectiveness of H-HPA on the passivation of the interface states was compared for both p- and n-type InGaAs substrates.
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