We investigate the voltage control of magnetism in a van der Waals (vdW) heterostructure device consisting of two distinct vdW materials, the ferromagnetic FeGeTe and the ferroelectric InSe. It is observed that gate voltages applied to the FeGeTe/InSe heterostructure device modulate the magnetic properties of FeGeTe with significant decrease in coercive field for both positive and negative voltages. Raman spectroscopy on the heterostructure device shows voltage-dependent increase in the in-plane InSe and FeGeTe lattice constants for both voltage polarities.
View Article and Find Full Text PDFThe emergence of a domain wall property that is forbidden by symmetry in bulk can offer unforeseen opportunities for nanoscale low-dimensional functionalities in ferroic materials. Here, we report that the piezoelectric response is greatly enhanced in the ferroelastic domain walls of centrosymmetric tungsten trioxide thin films due to a large strain gradient of 10 m, which exists over a rather wide width (~20 nm) of the wall. The interrelationship between the strain gradient, electric polarity, and the electromechanical property is scrutinized by detecting of the lattice distortion using atomic scale strain analysis, and also by detecting the depolarized electric field using differential phase contrast technique.
View Article and Find Full Text PDFThe direct emission of circularly polarized (CP) light improves the efficiency of an organic light-emitting diode and characterizes the secondary structure of proteins. In most cases, CP light is generated from a luminescent layer containing chiral characteristics, thereby generating only one kind of CP light in an entire device. Here, we propose direct CP light emissions using a twisted achiral conjugate polymer without any chiral dopant as an emitting layer (EML).
View Article and Find Full Text PDF