Short-wavelength infrared photodetector on Si employing strain-induced growth of very tall InAs nanowire arrays.

One-dimensional crystal growth enables the epitaxial integration of III-V compound semiconductors onto a silicon (Si) substrate despite significant lattice mismatch. Here, we report a short-wavelength infrared (SWIR, 1.4-3 μm) photodetector that employs InAs nanowires (NWs) grown on Si.

Structural and optical properties of the In(x)Ga(1-x)As nanowires grown on SiO2 via vapor-liquid-solid method.

We report the crystal growth of the In(x)Ga(1-x)As nanowires (NWs) on SiO2 substrate using metal organic chemical vapor deposition. Au nanoparticles which are disintegrated from thin Au film have been used as a catalyst for the vapor-liquid-solid growth. Electron microscopy characterization is performed to investigate the structural properties of the In(x)Ga(1-x)As NW.