Aluminum-Doped Indium Oxide Electron Transport Layer Grown by Atomic Layer Deposition: Highly Efficient and Damage-Resistant Interconnection Solution for All-Perovskite Tandem Solar Cells with 25.46% Efficiency.

In fabricating high-efficiency all-perovskite tandem solar cells (APTSCs) with a p-i-n configuration, the electron transport layer (ETL) plays a critical role in facilitating the transport of photogenerated electrons from the front cell to the recombination layer and protecting the front cell from damage during rear cell fabrication. This study introduces aluminum-doped InO (AIO) films grown by atomic layer deposition (ALD) as a promising ETL for high-efficiency APTSCs. ALD-grown AIO films with an optimized Al concentration exhibit superior charge transport characteristics, excellent transparency, and damage-resistant barrier properties against solution infiltration compared with conventional SnO ETLs and undoped ALD InO.

Enhanced Oxidation Resistance and Interface Stability of Atomic-Layer-Deposited MoN Electrodes via TiN Passivation for DRAM Cell Capacitor Applications.

The continuous miniaturization of dynamic random-access memory (DRAM) capacitors has amplified the demand for electrode materials featuring specific characteristics, such as low resistivity, high work function, chemical stability, excellent interface quality with high-k dielectrics, and superior mechanical properties. In this study, molybdenum nitride (MoN) films were deposited using a plasma-enhanced atomic layer deposition (PEALD) employing bis(isopropylcyclopentadienyl)molybdenum(IV) dihydride and NH plasma for DRAM capacitor electrode applications. Depending on the deposition temperatures of the PEALD MoN films ranging from 200 to 400 °C, the Mo/N ratio and crystal structure varied, transitioning from the cubic NaCl-B1-type MoN phase with Mo/N ratio of 1.

Novel Heteroleptic Tin(II) Complexes Capable of Forming SnO and SnO Thin Films Depending on Conditions Using Chemical Solution Deposition.

A new heteroleptic complex series of tin was synthesized by the salt metathesis reaction of SnX (X = Cl, Br, and I) with aminoalkoxide and various -alkoxy-functionalized carboxamide ligands. The complexes, [ClSn(dmamp)] (), [BrSn(dmamp)] (), and [ISn(dmamp)] (), were prepared from the salt metathesis reaction of SnX with one equivalent of dmamp; [Sn(dmamp)(empa)] (), [Sn(dmamp)(mdpa)] (), and [Sn(dmamp)(edpa)] () were prepared via the salt metathesis reaction using complex with one equivalent of -alkoxy-functionalized carboxamide ligand. Complexes - displayed dimeric molecular structures with tin metal centers interconnected by μ-O bonding via the alkoxy oxygen atom.

Effect of Ag Concentration Dispersed in HfO Thin Films on Threshold Switching.

A sneak path current-a current passing through a neighboring memory cell-is an inherent and inevitable problem in a crossbar array consisting of memristor memory cells. This serious problem can be alleviated by serially connecting the selector device to each memristor cell. Among the various types of selector device concepts, the diffusive selector has garnered considerable attention because of its excellent performance.

Wafer-Scale, Conformal, and Low-Temperature Synthesis of Layered Tin Disulfides for Emerging Nonplanar and Flexible Electronics.

Two-dimensional (2D) metal dichalcogenides have drawn considerable interest because they offer possibilities for the implementation of emerging electronics. The emerging electronics are moving toward two major directions: vertical expansion of device space and flexibility. However, the development of a synthesis method for 2D metal dichalcogenides that meets all the requirements remains a significant challenge.

Chemical origin of differences in steel corrosion behaviors of s-electron and p-electron liquid metals by first-principles calculation.

Steel corrosion is a key engineering issue in the development of advanced nuclear reactors using liquid metals. The present study demonstrates that the steel corrosion behaviors can be systematically understood and classified based on the types of valence electrons of liquid metals, namely, s-electron liquid metals (s-LMs), such as liquid Na and Li, and p-electron liquid metals (p-LMs), such as liquid lead-bismuth eutectic (LBE) and Pb, where the conduction band is composed of s and p valence electrons, respectively. Through a comparative analysis of the physiochemical states of 3d transition metal atoms dissolved in liquid Na and liquid LBE by means of first-principles molecular dynamics (FPMD), it is shown that the 3d and 4s orbitals of the transition metals hardly interact with the s band of s-LMs, while they strongly interact with the p band of p-LMs in a covalent manner.

High-Performance Thin-Film Transistors of Quaternary Indium-Zinc-Tin Oxide Films Grown by Atomic Layer Deposition.

A new deposition technique is required to grow the active oxide semiconductor layer for emerging oxide electronics beyond the conventional sputtering technique. Atomic layer deposition (ALD) has the benefits of versatile composition control, low defect density in films, and conformal growth over a complex structure, which can hardly be obtained with sputtering. This study demonstrates the feasibility of growing amorphous In-Zn-Sn-O (a-IZTO) through ALD for oxide thin-film transistor (TFT) applications.

Low-temperature wafer-scale synthesis of two-dimensional SnS.

Research on two-dimensional (2D) metal dichalcogenides is rapidly expanding owing to their unique characteristics that do not exist in bulk materials. The industrially compatible development of these emerging materials is indispensable to facilitate the transition of 2D metal dichalcogenides from the research stage to the practical industrial application stage. However, an industrially relevant method, i.

Performance of exchange-correlation functionals in density functional theory calculations for liquid metal: A benchmark test for sodium.

The performance of exchange-correlation functionals in density-functional theory (DFT) calculations for liquid metal has not been sufficiently examined. In the present study, benchmark tests of Perdew-Burke-Ernzerhof (PBE), Armiento-Mattsson 2005 (AM05), PBE re-parameterized for solids, and local density approximation (LDA) functionals are conducted for liquid sodium. The pair correlation function, equilibrium atomic volume, bulk modulus, and relative enthalpy are evaluated at 600 K and 1000 K.

New Heteroleptic Cobalt Precursors for Deposition of Cobalt-Based Thin Films.

A new series of heteroleptic complexes of cobalt were synthesized using aminoalkoxide and β-diketonate ligands. The complexes, [Co(dmamp)(acac)] (), [Co(dmamp)(tfac)] (), [Co(dmamp)(hfac)] (), [Co(dmamp)(tmhd)] (), and [Co(dmamb)(tmhd)] (), were prepared by two-step substitution reactions and studied using Fourier transform infrared spectroscopy, mass spectrometry, elemental analysis, and thermogravimetric analysis (TGA). Complexes - displayed dimeric molecular structures for all of the complexes with cobalt metal centers interconnected by μ-O bonding by the alkoxy oxygen atom.

Four-Bits-Per-Cell Operation in an HfO -Based Resistive Switching Device.

The quadruple-level cell technology is demonstrated in an Au/Al O /HfO /TiN resistance switching memory device using the industry-standard incremental step pulse programming (ISPP) and error checking/correction (ECC) methods. With the highly optimistic properties of the tested device, such as self-compliance and gradual set-switching behaviors, the device shows 6σ reliability up to 16 states with a state current gap value of 400 nA for the total allowable programmed current range from 2 to 11 µA. It is demonstrated that the conventional ISPP/ECC can be applied to such resistance switching memory, which may greatly contribute to the commercialization of the device, especially competitively with NAND flash.

Chemical states of 3d transition metal impurities in a liquid lead-bismuth eutectic analyzed using first principles calculations.

Steels are easily corroded in a liquid lead-bismuth eutectic (LBE) because their components, such as Fe, Cr and Ni, exhibit a high solubility in the liquid LBE. To understand the reason for such a high solubility of these 3d transition metals, we have performed first-principles molecular dynamics calculations and analyzed the pair-correlation functions, electronic densities of states, and Bader charges and volumes of the 3d transition metals dissolved in the liquid LBE as impurities. The calculations show that the 4s and 3d orbitals of the 3d impurity atoms largely interact with the 6p band of the LBE, which generates bonding orbitals.

Germanium Compounds Containing Ge═E Double Bonds (E = S, Se, Te) as Single-Source Precursors for Germanium Chalcogenide Materials.

New germanium chalcogenide precursors, S═Ge(dmamp) (3), S═Ge(dmampS) (4), Se═Ge(dmamp) (5), Se═Ge(dmampS) (6), Te═Ge(dmamp) (7), and Te═Ge(dmampS) (8), were synthesized from Ge(dmamp) (1) and Ge(dmampS) (2) using sulfur, selenium, and tellurium powders (dmamp = 1-dimethylamino-2-methyl-2-propanolate, dmampS = 1-dimethylamino-2-methylpropane-2-thiolate). Complexes 1 and 2 were synthesized from metathesis reactions of GeCl·dioxane with 2 equiv of aminoalkoxide or aminothiolate ligands. Thermogravimetric analysis of complex 1 displayed good thermal stability and volatility.

Low-Temperature Growth of Indium Oxide Thin Film by Plasma-Enhanced Atomic Layer Deposition Using Liquid Dimethyl(N-ethoxy-2,2-dimethylpropanamido)indium for High-Mobility Thin Film Transistor Application.

Low-temperature growth of InO films was demonstrated at 70-250 °C by plasma-enhanced atomic layer deposition (PEALD) using a newly synthesized liquid indium precursor, dimethyl(N-ethoxy-2,2-dimethylcarboxylicpropanamide)indium (MeIn(EDPA)), and O plasma for application to high-mobility thin film transistors. Self-limiting InO PEALD growth was observed with a saturated growth rate of approximately 0.053 nm/cycle in an ALD temperature window of 90-180 °C.

Heteroleptic strontium complexes stabilized by donor-functionalized alkoxide and β-diketonate ligands.

Heteroleptic complexes of strontium () were prepared by employing β-diketonates and donor-functionalized alkoxides as coordinating ligands. The results illustrate the effect of alkoxide substituent groups on the overall structures of the complexes. The presence of a terminal methoxy group in the alkoxide ligands leads to the formation of trimeric complexes , whereas the substituents on the amine nitrogen prove to have less influence in determining the structure.

Strong hydrophobizer: laterally chemisorbed low-molecular-weight polydimethylsiloxane.

We introduce a siloxane chain-based hydrophobizer that exhibits superior thermal and chemical stability compared to the conventional hydrophobizing silane agent under conditions of over 300 °C and pH 2-13. To demonstrate the capability of the siloxane chain-based hydrophobizer to serve as a highly robust chemical surface modifier, we present two applications: the formation of fine metal nanoparticles with a narrow size distribution by thermal aggregation of a metal thin film and the selective deposition of a ruthenium thin film by atomic layer deposition.

Targeting components of epigenome by small molecules.

The diverse epigenetic modifications regulate the gene expression and determine the cellular identity. Pioneering work over the past decades has highlighted that these epigenetic regulations establish normal development but also contribute various diseases. Furthermore, the epigenetic priming events are considered as a key factor for efficient master transcription factor(s) mediated reprogramming process.

Highly improved uniformity in the resistive switching parameters of TiO2 thin films by inserting Ru nanodots.

Limiting the location where electron injection occurs at the cathode interface to a narrower region is the key factor for achieving a highly improved RS performance, which can be achieved by including Ru Nanodots. The development of a memory cell structure truly at the nanoscale with such a limiting factor for the electric-field distribution can solve the non-uniformity issue of future ReRAM.

Strain evolution of each type of grains in poly-crystalline (Ba,Sr)TiO(3) thin films grown by sputtering.

The strain states of [111]-, [110]-, and [002]-oriented grains in poly-crystalline sputtered (Ba,Sr)TiO(3) thin films on highly [111]-oriented Pt electrode/Si substrates were carefully examined by X-ray diffraction techniques. Remarkably, [002]-oriented grains respond more while [110]- and [111]-oriented grains do less than the theoretically estimated responses, which is understandable from the arrangement of the TiO(6) octahedra with respect to the stress direction. Furthermore, such mechanical responses are completely independent of the degree of crystallization and film thickness.

Impact of bimetal electrodes on dielectric properties of TiO2 and Al-doped TiO2 films.

Rutile structured Al-doped TiO(2) (ATO) and TiO(2) films were grown on bimetal electrodes (thin Ru/thick TiN, Pt, and Ir) for high-performance capacitors. The work function of the top Ru layer decreased on TiN and increased on Pt and Ir when it was thinner than ~2 nm, suggesting that the lower metal within the electrodes influences the work function of the very thin Ru layer. The use of the lower electrode with a high work function for bottom electrode eventually improves the leakage current properties of the capacitor at a very thin Ru top layer (≤2 nm) because of the increased Schottky barrier height at the interface between the dielectric and the bottom electrode.

A theoretical model for Schottky diodes for excluding the sneak current in cross bar array resistive memory.

Kirchhoff's law was used to examine the electrical specifications of selection diodes, which are essential for suppressing the read interference problems in nano-scale resistive switching cross bar arrays with a high block density. The diode in the cross bar array with a 100 Mb block density should have a reverse/forward resistance ratio of > 10(8), and a forward current density of > 10(5) A cm(-2) for stable reading and writing operation. Whilst normal circuit simulators are heavily overloaded when the number of cells (m) connected to one bit and word line is larger (m >> 100), which is the desired range for high density cross bar arrays, the present model can provide a simple simulation.