The effect of wafer thinning and thermal capacitance on chip temperature of SiC Schottky diodes during surge currents.

Due to superior material properties of SiC for high-voltage devices, SiC Schottky diodes are used in energy-conversion systems such as solar-cell inverters, battery chargers, and power modules for electric cars and unmanned aerial vehicles. The reliable operation of these systems requires the chip temperature of SiC Schottky diodes to be maintained within the limit set by the device package. This is especially crucial during surge-current events that dissipate heat within the device.