Several optoelectronic issues, such as poor optical absorption and recombination, limit the power conversion efficiency of ultrathin Cu(In,Ga)Se (CIGS) solar cells. To mitigate recombination losses, two combined strategies were implemented: a potassium fluoride (KF) post-deposition treatment (PDT) and a rear interface passivation strategy based on an aluminum oxide (AlO) point contact structure. The simultaneous implementation of both strategies is reported for the first time on ultrathin CIGS devices.
View Article and Find Full Text PDFThe currently most efficient polycrystalline solar cells are based on the Cu(In,Ga)Se compound as a light absorption layer. However, in view of new concepts of nanostructured solar cells, CuInSe nanostructures are of high interest. In this work, we report CuInSe nanodots grown through a vacuum-compatible co-evaporation growth process on an amorphous surface.
View Article and Find Full Text PDFMg doping of GaAs nanowires has been established as a viable alternative to Be doping in order to achieve p-type electrical conductivity. Although reports on the optical properties are available, few reports exist about the physical properties of intermediate-to-high Mg doping in GaAs nanowires grown by molecular beam epitaxy (MBE) on GaAs(111)B and Si(111) substrates. In this work, we address this topic and present further understanding on the fundamental aspects.
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