Negative differential resistance behavior and memory effect in laterally bridged ZnO nanorods grown by hydrothermal method.

A novel memory device based on laterally bridged ZnO nanorods (NRs) in the opposite direction was fabricated by the hydrothermal growth method and characterized. The electrodes were defined by a simple photolithography method. This method has lower cost, simpler process, and higher reliability than the traditional focused ion beam lithography method.