Interfacial Electronic Charge Trapping and Photonic Carrier Excitation Coupling in Solution-Processed Zinc-Tin Oxide Thin-Film Transistors Applied for Logic Gate Design and Quantized Neural Network.

Components needed in Artificial Intelligence with a higher information capacity are critically needed and have garnered significant attention at the forefront of information technology. This study utilizes solution-processed zinc-tin oxide (ZTO) thin-film phototransistors and modulates the values of , which allows for the regulation of electron trapping/detrapping at the ZTO/SiO interface. By coupling the excited photonic carrier and electronic trapping, logic gates such as "AND," "OR," "NAND," and "NOR" can be achieved.

Achieving neuronal dynamics with spike encoding and spatial-temporal summation in vanadium-based threshold switching memristor for asynchronous signal integration.

Artificial neuronal devices that emulate the dynamics of biological neurons are pivotal for advancing brain emulation and developing bio-inspired electronic systems. This paper presents the design and demonstration of an artificial neuron circuit based on a Pt/V/AlO/Pt threshold switching memristor (TSM) integrated with an external resistor. By applying voltage pulses, we successfully exhibit the leaky integrate-and-fire (LIF) behavior, as well as both spatial and spatiotemporal summation capabilities, achieving the asynchronous signal integration.

Light-to-Spike Encoding Using Indium-Gallium-Zinc Oxide Phototransistor for all-Color Image Recognition with Dynamic Range and Precision Tunability.

To enhance the efficiency of machine vision system, physical hardware capable of sensing and encoding is essential. However, sensing and encoding color information has been overlooked. Therefore, this work utilizes an indium-gallium-zinc oxide (IGZO) phototransistor to detect varying densities of red, green, and blue (RGB) light, converting them into corresponding drain current (I) states.

Unveiling transient current response in bilayer oxide-based physical reservoirs for time-series data analysis.

Physical reservoirs employed to map time-series data and analyze extracted features have attracted interest owing to their low training cost and mitigated interconnection complexity. This study reports a physical reservoir based on a bilayer oxide-based dynamic memristor. The proposed device exhibits a nonlinear current response and short-term memory (STM), satisfying the requirements of reservoir computing (RC).

Mimicking Pain-Perceptual Sensitization and Pattern Recognition Based on Capacitance- and Conductance-Regulated Neuroplasticity in Neural Network.

Neuromorphic computing, inspired by the biological neuronal system, is a high potential approach to substantially alleviate the cost of computational latency and energy for massive data processing. Artificial synapses with regulable synaptic weights are the basis of neuromorphic computation, providing an efficient and low-power system to overcome the constraints of the von Neumann architecture. Here, we report an ITO/TaO-based synaptic capacitor and transistor.

Dual Light Temporal Coding Modes Enabled by Nanoparticle-Mediated Phototransistors via Gate Bias Modulation for Brain-Inspired Visual Perception.

The core integration and cooperation of the retina, neurons, and synapses in the visual systems enable humans to effectively sense and process visual information with low power consumption. To mimic the human visual system, an artificial sensory nerve, along with optical sensing─a paired-pulse ratio (PPR) of the light pulse stimulated currents─and neural coding has been developed. For performing the artificial visual perception functions, we consistently reveal the positive and negative correlations between the PPR index and light pulse time interval by applying two consecutive light stimuli with gate voltages of -10 and 5 V, respectively, to a phototransistor.

Enhancement of HS sensing performance of rGO decorated CuO thin films: experimental and DFT studies.

We demonstrate a highly selective and sensitive Cupric oxide (CuO) thin film-based low concentration Hydrogen sulfide (HS) sensor. The sensitivity was improved around three times by decorating with reduced graphene oxide (rGO) nanosheets. CuO thin films were deposited by Chemical Vapor Deposition followed by inter-digital electrode fabrication by a thermal evaporations system.

First-principles simulation of neutral and charged oxygen vacancies in m-ZrO: an origin of filamentary type resistive switching.

Metal oxide ZrOhas been widely explored for resistive switching application due to excellent properties like high ON/OFF ratio, superior data retention, and low operating voltage. However, the conduction mechanism at the atomistic level is still under debate. Therefore, we have performed comprehensive insights into the role of neutral and charged oxygen vacancies in conduction filament (CF) formation and rupture, which are demonstrated using the atomistic simulation based on density functional theory (DFT).

Synaptic Emulation via Ferroelectric P(VDF-TrFE) Reinforced Charge Trapping/Detrapping in Zinc-Tin Oxide Transistor.

Brain inspired artificial synapses are highly desirable for neuromorphic computing and are an alternative to a conventional computing system. Here, we report a simple and cost-effective ferroelectric capacitively coupled zinc-tin oxide (ZTO) thin-film transistor (TFT) topped with ferroelectric copolymer poly(vinylidene fluoride-trifluoroethylene) (P(VDF-TrFE)) for artificial synaptic devices. Ferroelectric dipoles enhance the charge trapping/detrapping effect in ZTO TFT, as confirmed by the transfer curve (-) analysis.

Efficacious CO Photoconversion to C2 and C3 Hydrocarbons on Upright SnS-SnS Heterojunction Nanosheet Frameworks.

In this work, SnS-SnS heterostructured upright nanosheet frameworks are constructed on FTO substrates, which demonstrate promising photocatalytic performances for the conversion of CO and water to C2 (acetaldehyde) and C3 (acetone) hydrocarbons without H formation. With post annealing in designated atmospheres, the photocatalytic activity of the SnS-SnS heterostructured nanosheet framework is critically enhanced by increasing the fraction of crystalline SnS in nanosheets through partial transformation of the SnS matrix to SnS but not obviously influenced by improving the crystallinity of the SnS matrix. DFT calculations indicate that transformed SnS possesses the CO adsorption sites with significantly lower activation energy for the rate-determining step to drive efficient CO conversion catalysis.

Violet-light stimulated synaptic and learning functions in a zinc-tin oxide photoelectric transistor for neuromorphic computation.

In contrast to the commonly present UV light-stimulated synaptic oxide thin-film transistors, this study demonstrates a violet light (wavelength of 405 nm) stimulated zinc-tin oxide (ZTO) photoelectric transistor for potential application in optical neuromorphic computation. Owing to the light-induced oxygen vacancy ionization and persistent photoconductivity effect in ZTO, this device well imitates prominent synaptic functions, including photonic potentiation, electric depression, and short-term memory (STM) to long-term memory (LTM) transition. A highly linear and broad dynamic range of photonic potentiation can be achieved by modulating the light power density, while electric depression is realized by gate voltage pulsing.

Aluminum electrode modulated bipolar resistive switching of Al/fuel-assisted NiOx/ITO memory devices modeled with a dual-oxygen-reservoir structure.

Bipolar resistive switching in Al/fuel-assisted NiO(x) (40 nm)/ITO devices is demonstrated in this work. XPS analysis reveals the simultaneous presence of metallic Ni, Ni(2)O(3), and NiO components in the fuel-assisted NiO(x). The concentration, as well as spreading of the metallic Ni and accompanying oxygen vacancies, are related to the Al/NiO(x) interfacial reaction, which is enhanced by the increasing thickness of the Al top electrode.

The importance of p-n junction interfaces for efficient small molecule-based organic solar cells.

The efficiency of small-molecule solar cells critically depends on the match of the junction of the donor and acceptor semiconductors used in these devices to create charged carriers and on the mobility of individual components to transport holes and electrons. In the present study, a 2% efficient bilayer organic solar cell consisting of a p-type semiconductor, pentacene, and an n-type semiconductor, N,N'-diheptyl-3,4,9,10-perylenetetracarboxylic diimide (PTCDI-C(7)), is fabricated. The morphology of PTCDI-C(7) interestingly follows pentacene due to the matched surface energy of these two active layers and the easily deposited PTCDI-C(7) monomers on an inclined plane of the pentacene grains.

Resistive switching behavior and multiple transmittance states in solution-processed tungsten oxide.

In this work, a tungsten oxide (WO(x)) film is prepared using a thiourea-assisted solution process. We demonstrate a device composed of fluorine doped tin oxide (FTO)-glass/WO(x)/electrolyte/indium-tin oxide (ITO)-glass stacking electrochromic (EC) structure and Al electrodes that are locally patterned and interposed between the WO(x) film and electrolyte, which form an Al(top electrode)/WO(x)/FTO(bottom electrode) resistance random access memory (RRAM) unit. According to transmission electron microscopy and X-ray photoelectron spectroscopy analyses, the WO(x) film contains nanosize pores and metallic-tungsten nanoclusters which are scattered within the tungsten oxide layer and concentrated along the interface between the Al electrode and WO(x) film.

Schottky barrier mediated single-polarity resistive switching in Pt layer-included TiO(x) memory device.

A distinct unipolar but single-polarity resistive switching behavior is observed in a TiO(x)/Pt/TiO(x) trilayer structure, formed by thermal oxidation of a Ti/Pt/Ti stack. As a comparison, a memory device with a single TiO(x) active layer (without addition of Pt midlayer) is also fabricated but it cannot perform resistive switching. Energy band diagrams are illustrated to realize the modulation of Schottky barrier junctions and current conduction in TiO(x)-based devices under various biasing polarities.

An efficient route to nanostructured tungsten oxide films with improved electrochromic properties.

An effective chemical route to nanostructured tungsten oxide films derived from a peroxopolytungstic acid (PTA)/thiourea precursor solution is demonstrated. The conventional procedure of preparing the precursor needs more than 24 h for well-mixing and refluxing the PTA-based solution, while the thiourea-assisted approach takes less than 1 h to prepare the precursor solution because the excess hydrogen peroxide can be efficiently eliminated by oxidation of thiourea. With the precursor solution, tungsten oxide films are deposited by spin coating followed by high temperature annealing.

Outperformed electrochromic behavior of poly(ethylene glycol)-template nanostructured tungsten oxide films with enhanced charge transfer/transport characteristics.

Porous tungsten oxide films of nanocrystalline tungsten oxide embedded in an amorphous tungsten oxide matrix have been synthesized via poly(ethylene glycol) (PEG)-template sol-gel technique with peroxopolytungstic acid precursor. The effects of PEG addition on the microstructure and electrochromic performance of the tungsten oxide films are investigated. Charge transfer/transport properties in the tungsten oxide films are studied by electrochemical impedance spectroscopy (EIS) as well.

Fast-switching photovoltachromic cells with tunable transmittance.

In this study, we demonstrate a photovoltachromic cell (PVCC) which is a solar cell and able to take solar energy to stimulate chromic behavior with the characteristic of tunable transmittance. The cell is composed of a patterned WO(3)/Pt electrochromic electrode and a dye-sensitized TiO(2) nanoparticle photoanode. Compared to reported photoelectrochromic cells (PECC) with nonpatterned WO(3) electrochromic electrodes, PVCC achieves a much faster bleaching time of only 60 s by blocking the light at short circuit.

Performance and electron transport properties of TiO(2) nanocomposite dye-sensitized solar cells.

TiO(2) nanowire (NW)/nanoparticle (NP) composite films have been fabricated by hybridizing various ratios of hydrothermal anatase NWs and TiO(2) NPs for use in dye-sensitized solar cells (DSSCs). Scanning electron microscopy (SEM) images reveal that uniform NW/NP composite films were formed on fluorine-doped tin oxide (FTO) substrates by the dip-coating method. The NWs are randomly but neither vertically nor horizontally oriented within the composite film.