Low Cost Local Contact Opening by Using Polystyrene Spheres Spin-Coating Method for PERC Solar Cells.

The passivated emitter and rear cell (PERC) concept is one of the most promising technologies for increasing crystalline silicon solar cell efficiency. Instead of using the traditional laser ablation process, this paper demonstrates spin-coated polystyrene spheres (PS) to create local openings on the rear side of PERCs. Effects of PS concentration and post-annealing temperature on PERC performance are investigated.

Hydrogen induced redox mechanism in amorphous carbon resistive random access memory.

We investigated the bipolar resistive switching characteristics of the resistive random access memory (RRAM) device with amorphous carbon layer. Applying a forming voltage, the amorphous carbon layer was carbonized to form a conjugation double bond conductive filament. We proposed a hydrogen redox model to clarify the resistive switch mechanism of high/low resistance states (HRS/LRS) in carbon RRAM.

Space electric field concentrated effect for Zr:SiO2 RRAM devices using porous SiO2 buffer layer.

To improve the operation current lowing of the Zr:SiO2 RRAM devices, a space electric field concentrated effect established by the porous SiO2 buffer layer was investigated and found in this study. The resistive switching properties of the low-resistance state (LRS) and high-resistance state (HRS) in resistive random access memory (RRAM) devices for the single-layer Zr:SiO2 and bilayer Zr:SiO2/porous SiO2 thin films were analyzed and discussed. In addition, the original space charge limited current (SCLC) conduction mechanism in LRS and HRS of the RRAM devices using bilayer Zr:SiO2/porous SiO2 thin films was found.

High performance of graphene oxide-doped silicon oxide-based resistance random access memory.

In this letter, a double active layer (Zr:SiOx/C:SiOx) resistive switching memory device with outstanding performance is presented. Through current fitting, hopping conduction mechanism is found in both high-resistance state (HRS) and low-resistance state (LRS) of double active layer RRAM devices. By analyzing Raman and FTIR spectra, we observed that graphene oxide exists in C:SiOx layer.