Modeling of Composition and Channel Length-Dependent Transient Characteristics in Short-Channel IGZO Field-Effect Transistors.

In this study, we analyze the characteristics of fast transient drain current () in IGZO-based field-effect transistors (FETs) with different composition ratios (device O: ratio of 1:1:1 for In, Ga, Zn, device G: ratio of 0.307:0.39:0.

Cation composition ratio and channel length effects on bias stress instability in amorphous InGaZnO back-end-of-line field-effect transistors.

This study optimizes V and ΔV in amorphous indium-gallium-zinc-oxide (a-IGZO) field-effect transistors (FETs) by examining the influence of both channel length (L) and Ga composition. It was observed that as the ratio of In: Ga: Zn changed from 1:1:1 to 0.307:0.

High-Temperature Stable Amorphous Sn-Rich InSnGaO Thin Films Fabricated Via Atomic Layer Deposition for Next-Generation Dynamic Random-Access Memory Applications.

Facile phase transitions and electrical degradation of amorphous oxide semiconductors due to a high thermal budget have significantly limited their dynamic random-access memory (DRAM) applications, which require high thermal stability at temperatures over 600 °C. In this paper, we report an amorphous In-Sn-Ga-O (ITGO) semiconductor fabricated via atomic layer deposition, which exhibits high-temperature (∼700 °C) phase stability with moderate electrical properties. The optimal Sn-rich ITGO composition (In/Sn/Ga = 25:58:17 at.

Device-Algorithm Co-Optimization for an On-Chip Trainable Capacitor-Based Synaptic Device with IGZO TFT and Retention-Centric Tiki-Taka Algorithm.

Analog in-memory computing synaptic devices are widely studied for efficient implementation of deep learning. However, synaptic devices based on resistive memory have difficulties implementing on-chip training due to the lack of means to control the amount of resistance change and large device variations. To overcome these shortcomings, silicon complementary metal-oxide semiconductor (Si-CMOS) and capacitor-based charge storage synapses are proposed, but it is difficult to obtain sufficient retention time due to Si-CMOS leakage currents, resulting in a deterioration of training accuracy.

A case of carbon monoxide poisoning with thrombus in right atrium.

Carbon monoxide is a nonirritant, odorless, colorless gas. Its effects are prominent in organs most sensitive to oxygen deprivation, such as the heart, brain, and kidney. Although less frequently, an association between thromboembolic events and carbon monoxide poisoning has been shown in the literatures.

Radiating amyloid fibril formation on the surface of lipid membranes through unit-assembly of oligomeric species of α-synuclein.

Background: Lewy body in the substantia nigra is a cardinal pathological feature of Parkinson's disease. Despite enormous efforts, the cause-and-effect relationship between Lewy body formation and the disorder is yet to be explicitly unveiled.

Methodology/principal Findings: Here, we showed that radiating amyloid fibrils (RAFs) were instantly developed on the surface of synthetic lipid membranes from the β-sheet free oligomeric species of α-synuclein through a unit-assembly process.

Exchange-induced electron transport in heavily phosphorus-doped si nanowires.

Heavily phosphorus-doped silicon nanowires (Si NWs) show intriguing transport phenomena at low temperature. As we decrease the temperature, the resistivity of the Si NWs initially decreases, like metals, and starts to increase logarithmically below a resistivity minimum temperature (T(min)), which is accompanied by (i) a zero-bias dip in the differential conductance and (ii) anisotropic negative magnetoresistance (MR), depending on the angle between the applied magnetic field and current flow. These results are associated with the impurity band conduction and electron scattering by the localized spins at phosphorus donor states.

Large-scale assembly of highly flexible low-noise devices based on silicon nanowires.

Recently, integrated flexible devices based on silicon nanowires (Si-NWs) have received significant attention as high performance flexible devices. However, most previous assembly methods can generate only specifically-shaped devices and require unconventional facilities, which has been a major hurdle for industrial applications. Herein, we report a simple but very efficient method for assembling Si-NWs into virtually generally-shape patterns on flexible substrates using only conventional microfabrication facilities, allowing us to mass-produce highly flexible low-noise devices.

Large-scale assembly of silicon nanowire network-based devices using conventional microfabrication facilities.

We present a method for assembling silicon nanowires (Si-NWs) in virtually general shape patterns using only conventional microfabrication facilities. In this method, silicon nanowires were functionalized with amine groups and dispersed in deionized water. The functionalized Si-NWs exhibited positive surface charges in the suspensions, and they were selectively adsorbed and aligned onto negatively charged surface regions on solid substrates.

Band-gap modulation in single-crystalline Si1-xGex nanowires.

We report the energy band-gap modulation of single-crystalline Si1-xGex (0 View Article and Find Full Text PDF