Root-growth mechanism for single-walled boron nitride nanotubes in laser vaporization technique.

We present a detailed study of the growth mechanism of single-walled boron nitride nanotubes synthesized by laser vaporization, which is the unique route known to the synthesis of this kind of tube in high quantities. We have performed a nanometric chemical and structural characterization by transmission electron microscopy (high-resolution mode (HRTEM) and electron energy loss spectroscopy) of the synthesis products. Different boron-based compounds and other impurities were identified in the raw synthesis products.

C-BN patterned single-walled nanotubes synthesized by laser vaporization.

We report on the synthesis of C-BN single-walled nanotubes made of BN nanodomains embedded into a graphene layer. The synthesis process consists of vaporizing, by a continuous CO2 laser, a target made of carbon and boron mixed with a Co/Ni catalyst under N2 atmosphere. High-resolution transmission electron microscopy (HRTEM) and nanoelectron energy loss spectroscopy (nanoEELS) provide direct evidence that boron and nitrogen co-segregate with respect to carbon and form nanodomains within the hexagonal lattice of the graphene layer in a sequential manner.