Owing to its high spatial resolution and its high sensitivity to chemical element detection, transmission electron microscopy (TEM) technique enables to address high-level materials characterization of advanced technologies in the microelectronics field. TEM instruments fitted with various techniques are well-suited for assessing the local structural and chemical order of specific details. Among these techniques, 4D-STEM is suitable to estimate the strain distribution of a large field of view.
View Article and Find Full Text PDFThe widespread adoption of gGaN in radiation-hard semiconductor devices relies on a comprehensive understanding of its response to strongly ionizing radiation. Despite being widely acclaimed for its high radiation resistance, the exact effects induced by ionization are still hard to predict due to the complex phase-transition diagrams and defect creation-annihilation dynamics associated with group-III nitrides. Here, the Two-Temperature Model, Molecular Dynamics simulations and Transmission Electron Microscopy, are employed to study the interaction of Swift Heavy Ions with GaN at the atomic level.
View Article and Find Full Text PDFGlucose oxidase (GOx) is immobilized on ZnO nanoparticle-modified electrodes. The immobilized glucose oxidase shows efficient mediated electron transfer with ZnO nanoparticles to which the ferrocenyl moiety is π-stacked into a supramolecular architecture. The constructed ZnO-Fc/CNT modified electrode exhibits high ferrocene surface coverage, preventing any leakage of the π-stacked ferrocene from the newly described ZnO hybrid nanoparticles.
View Article and Find Full Text PDFThe effectiveness of amine-borane as reducing agent for the synthesis of iron nanoparticles has been investigated. Large (2-4 nm) Fe nanoparticles were obtained from [Fe{N(SiMe3)2}2]. Inclusion of boron in the nanoparticles is clearly evidenced by extended X-ray absorption fine structure spectroscopy and Mössbauer spectrometry.
View Article and Find Full Text PDF