Correction to Influence of Generated Defects by Ar Implantation on the Thermoelectric Properties of ScN.

[This corrects the article DOI: 10.1021/acsaem.2c01672.

Influence of Generated Defects by Ar Implantation on the Thermoelectric Properties of ScN.

Nowadays, making thermoelectric materials more efficient in energy conversion is still a challenge. In this work, to reduce the thermal conductivity and thus improve the overall thermoelectric performances, point and extended defects were generated in epitaxial 111-ScN thin films by implantation using argon ions. The films were investigated by structural, optical, electrical, and thermoelectric characterization methods.

Atomic scale structure of (001) hydrogen-induced platelets in germanium.

An accurate characterization of the structure of hydrogen-induced platelets is a prerequisite for investigating both hydrogen aggregation and formation of larger defects. On the basis of quantitative high resolution transmission electron microscopy experiments combined with extensive first principles calculations, we present a model for the atomic structure of (001) hydrogen-induced platelets in germanium. It involves broken Ge-Ge bonds in the [001] direction that are dihydride passivated, vacancies, and trapped H(2) molecules, showing that the species involved in platelet formation depend on the habit plane.