Heterogeneous integration of GaInAsSb-GaSb photodiodes on SOI photonic integrated circuits for SWIR applications.

We demonstrate the heterogeneous integration of GaInAsSb-GaSb photodiodes on 220 nm SOI photonic integrated circuits (PICs) using the micro-transfer-printing (μTP) technology, for operation in the short-wave infrared (SWIR) wavelength region. Utilizing an evanescent coupling scheme between a silicon waveguide and a III-V structure, the device exhibits a room temperature responsivity of 1.23 and 1.

Study of evanescently-coupled and grating-assisted GaInAsSb photodiodes integrated on a silicon photonic chip.

In this paper we present GaInAsSb photodiodes heterogeneously integrated on SOI by BCB adhesive bonding for operation in the short-wave infrared wavelength region. Photodiodes using evanescent coupling between the silicon waveguide and the III-V structure are presented, showing a room temperature responsivity of 1.4A/W at 2.