In/ZnO bulk compounds were synthesized using a simple solid-state method, focusing on the structural features and thermoelectric properties with very low indium content (0 ≤ x ≤ 0.02).
High-angle annular dark-field scanning transmission electron microscopy revealed that indium creates defects in the ZnO structure, improving electrical conductivity and thermoelectric performance through phonon scattering, even at low doping levels.
This research highlights the potential for dopant-induced planar defects to enhance the properties of transition metal compounds, paving the way for future thermoelectric compound synthesis.