3D Shape Reconstruction of Ge Nanowires during Vapor-Liquid-Solid Growth under Modulating Electric Field.

Bottom-up growth offers precise control over the structure and geometry of semiconductor nanowires (NWs), enabling a wide range of possible shapes and seamless heterostructures for applications in nanophotonics and electronics. The most common vapor-liquid-solid (VLS) growth method features a complex interaction between the liquid metal catalyst droplet and the anisotropic structure of the crystalline NW, and the growth is mainly orchestrated by the triple-phase line (TPL). Despite the intrinsic mismatch between the droplet and the NW symmetries, its discussion has been largely avoided because of its complexity, which has led to the situation when multiple observed phenomena such as NW axial asymmetry or the oscillating truncation at the TPL still lack detailed explanation.

Synthesis of Few-Layered Transition-Metal Dichalcogenides by Ion Implantation of Chalcogen and Metal Species into Sapphire.

The growth of transition-metal dichalcogenides (TMDCs) has been performed so far using most established thin-film growth techniques (e.g., vapor phase transport, chemical vapor deposition, molecular beam epitaxy, etc.

Evolution of Cu-In Catalyst Nanoparticles under Hydrogen Plasma Treatment and Silicon Nanowire Growth Conditions.

We report silicon nanowire (SiNW) growth with a novel Cu-In bimetallic catalyst using a plasma-enhanced chemical vapor deposition (PECVD) method. We study the structure of the catalyst nanoparticles (NPs) throughout a two-step process that includes a hydrogen plasma pre-treatment at 200 °C and the SiNW growth itself in a hydrogen-silane plasma at 420 °C. We show that the H-plasma induces a coalescence of the Cu-rich cores of as-deposited thermally evaporated NPs that does not occur when the same annealing is applied without plasma.

Parallel Aluminum-Cobalt Oxide Nanosheet Arrays with High-Temperature Ferromagnetism.

Parallel nanomaterials possess unique properties and show potential applications in industry. Whereas, vertically aligned 2D nanomaterials have plane orientations that are generally chaotic. Simultaneous control of their growth direction and spatial orientation for parallel nanosheets remains a big challenge.

Grid batch-dependent tuning of glow discharge parameters.

Sample preparation on cryo-EM grids can give various results, from very thin ice and homogeneous particle distribution (ideal case) to unwanted behavior such as particles around the "holes" or complexes that do not entirely correspond to the one in solution (real life). We recently run into such a case and finally found out that variations in the 3D reconstructions were systematically correlated with the grid batches that were used. We report the use of several techniques to investigate the grids' characteristics, namely TEM, SEM, Auger spectroscopy and Infrared Interferometry.

Influence of the Electron Beam and the Choice of Heating Membrane on the Evolution of Si Nanowires' Morphology in In Situ TEM.

We used in situ transmission electron microscopy (TEM) to observe the dynamic changes of Si nanowires under electron beam irradiation. We found evidence of structural evolutions under TEM observation due to a combination of electron beam and thermal effects. Two types of heating holders were used: a carbon membrane, and a silicon nitride membrane.

Tapering-free monocrystalline Ge nanowires synthesized via plasma-assisted VLS using In and Sn catalysts.

In and Sn are the type of catalysts which do not introduce deep level electrical defects within the bandgap of germanium (Ge). However, Ge nanowires produced using these catalysts usually have a large diameter, a tapered morphology, and mixed crystalline and amorphous phases. In this study, we show that plasma-assisted vapor-liquid-solid (PA-VLS) method can be used to synthesize Ge nanowires.

High Density of Quantum-Sized Silicon Nanowires with Different Polytypes Grown with Bimetallic Catalysts.

When Si nanowires (NWs) have diameters below about 10 nm, their band gap increases as their diameter decreases; moreover, it can be direct if the material adopts the metastable diamond hexagonal structure. To prepare such wires, we have developed an original variant of the vapor-liquid-solid process based on the use of a bimetallic Cu-Sn catalyst in a plasma-enhanced chemical vapor deposition reactor, which allows us to prevent droplets from coalescing and favors the growth of a high density of NWs with a narrow diameter distribution. Controlling the deposited thickness of the catalyst materials at the sub-nanometer level allows us to get dense arrays (up to 6 × 10 cm) of very-small-diameter NWs of 6 nm on average (standard deviation of 1.

Experimental observation of carousel-like phason flips in the decagonal quasicrystal AlCrFeSi.

Quasicrystals have special crystal structures with long-range order, but without translational symmetry. Unexpectedly, carousel-like successive flippings of groups of atoms inside the ∼2 nm decagonal structural subunits of the decagonal quasicrystal AlCrFeSi were directly observed using in situ high-temperature high-resolution transmission electron microscopy imaging. The observed directionally successive phason flips occur mainly clockwise and occasionally anticlockwise.

Direct evidence of 2H hexagonal Si in Si nanowires.

Hexagonal Si (2H polytype) has attracted great interest because of its unique physical properties and wide range of potential applications. For example, it might be used in heterojunctions based on hexagonal and cubic Si. Although hexagonal Si has been reported in Si nanowires, its existence is doubted because structural defects of diamond cubic Si can produce structural signals similar to those attributed to hexagonal Si.

Atomic Step Flow on a Nanofacet.

Crystal growth often proceeds by atomic step flow. When the surface area available for growth is limited, the nucleation and progression of the steps can be affected. This issue is particularly relevant to the formation of nanocrystals.

Tin dioxide nanoparticles as catalyst precursors for plasma-assisted vapor-liquid-solid growth of silicon nanowires with well-controlled density.

The fabrication of arrays of silicon nanowires (Si NWs) with well-defined surface coverage using the vapor-liquid-solid process requires a good control of the density and size distribution for the metal catalyst. We report on a cost-effective bottom-up approach to produce Si NWs by a low-temperature deposition technology using plasma-enhanced chemical vapor deposition and tin dioxide (SnO) nanoparticles as the source of tin catalyst. This strategy offers a straightforward method to select specific particle sizes by conventional colloidal techniques, and to tune the surface coverage using a polyelectrolyte layer to efficiently immobilize the particles on the substrate by electrostatic grafting.

On the Mechanism of In Nanoparticle Formation by Exposing ITO Thin Films to Hydrogen Plasmas.

We present our systematic work on the in situ generation of In nanoparticles (NPs) from the reduction of ITO thin films by hydrogen (H) plasma exposure. In contrast to NP deposition from the vapor phase (i.e.

Influence of deposition rate on the structural properties of plasma-enhanced CVD epitaxial silicon.

Solar cells based on epitaxial silicon layers as the absorber attract increasing attention because of the potential cost reduction. In this work, we studied the influence of the deposition rate on the structural properties of epitaxial silicon layers produced by plasma-enhanced chemical vapor deposition (epi-PECVD) using silane as a precursor and hydrogen as a carrier gas. We found that the crystalline quality of epi-PECVD layers depends on their thickness and deposition rate.

Plasma-Assisted Growth of Silicon Nanowires by Sn Catalyst: Step-by-Step Observation.

A comprehensive study of the silicon nanowire growth process has been carried out. Silicon nanowires were grown by plasma-assisted-vapor-solid method using tin as a catalyst. We have focused on the evolution of the silicon nanowire density, morphology, and crystallinity.

Low temperature plasma enhanced CVD epitaxial growth of silicon on GaAs: a new paradigm for III-V/Si integration.

The integration of III-V semiconductors with silicon is a key issue for photonics, microelectronics and photovoltaics. With the standard approach, namely the epitaxial growth of III-V on silicon, thick and complex buffer layers are required to limit the crystalline defects caused by the interface polarity issues, the thermal expansion, and lattice mismatches. To overcome these problems, we have developed a reverse and innovative approach to combine III-V and silicon: the straightforward epitaxial growth of silicon on GaAs at low temperature by plasma enhanced CVD (PECVD).

Synthesis of conducting transparent few-layer graphene directly on glass at 450 °C.

Post-growth transfer and high growth temperature are two major hurdles that research has to overcome to get graphene out of research laboratories. Here, using a plasma-enhanced chemical vapour deposition process, we demonstrate the large-area formation of continuous transparent graphene layers at temperatures as low as 450 °C. Our few-layer graphene grows at the interface between a pre-deposited 200 nm Ni catalytic film and an insulating glass substrate.

Synthesis of few-layered graphene by ion implantation of carbon in nickel thin films.

The synthesis of few-layered graphene is performed by ion implantation of carbon species in thin nickel films, followed by high temperature annealing and quenching. Although ion implantation enables a precise control of the carbon content and of the uniformity of the in-plane carbon concentration in the Ni films before annealing, we observe thickness non-uniformities in the synthesized graphene layers after high temperature annealing. These non-uniformities are probably induced by the heterogeneous distribution/topography of the graphene nucleation sites on the Ni surface.