Hybrid Organic-Si C-MOSFET Image Sensor Designed with Blue-, Green-, and Red-Sensitive Organic Photodiodes on Si C-MOSFET-Based Photo Signal Sensor Circuit.

The resolution of Si complementary metal-oxide-semiconductor field-effect transistor (C-MOSFET) image sensors (CISs) has been intensively enhanced to follow the technological revolution of smartphones, AI devices, autonomous cars, robots, and drones, approaching the physical and material limits of a resolution increase in conventional Si CISs because of the low quantum efficiency (i.e., ~40%) and aperture ratio (i.

Potassium Iodide Doping for Vacancy Substitution and Dangling Bond Repair in InP Core-Shell Quantum Dots.

This work highlights the novel approach of incorporating potassium iodide (KI) doping during the synthesis of InP core quantum dots (QDs) to significantly reduce the concentration of vacancies (i.e., In vacancies; ) within the bulk of the core QD and inhibit the formation of InPO at the core QD-ZnSe shell interfaces.

Fumed Silica-Based Ultra-High-Purity Synthetic Quartz Powder via Sol-Gel Process for Advanced Semiconductor Process beyond Design Rule of 3 nm.

Fumed silica-based ultra-high-purity synthetic quartz powder was developed via the sol-gel process to apply to quartz wares and quartz crucibles for use in advanced semiconductor processes. The process conditions of preparing potassium silicate solution, gelation, and cleaning were optimized, i.e.

Simple Ge/Si bilayer junction-based doping-less tunnel field-effect transistor.

Tunnel field-effect transistors (TFETs) have garnered great interest as an option for the replacement of metal-oxide-semiconductor field-effect transistors owing to their extremely low off-current and fast switching suitable for low-power-consumption applications. However, conventional doped TFETs have the disadvantage of introducing undesirable random dopant fluctuation (RDF) events, which cause a large variance in the threshold voltage and ambipolar leakage current at negative gate voltages. In this study, a simple approach for charge plasma-based doping-less TFETs (DL-TFETs), including the Ge/Si bilayer frame, which affects the RDF and low on-current issues, was developed by the commercially available Silvaco Atlas device simulator.

Silicon Wafer CMP Slurry Using a Hydrolysis Reaction Accelerator with an Amine Functional Group Remarkably Enhances Polishing Rate.

Recently, as an alternative solution for overcoming the scaling-down limitations of logic devices with design length of less than 3 nm and enhancing DRAM operation performance, 3D heterogeneous packaging technology has been intensively researched, essentially requiring Si wafer polishing at a very high Si polishing rate (500 nm/min) by accelerating the degree of the hydrolysis reaction (i.e., Si-O-H) on the polished Si wafer surface during CMP.

Super-Linear-Threshold-Switching Selector with Multiple Jar-Shaped Cu-Filaments in the Amorphous Ge Se Resistive Switching Layer in a Cross-Point Synaptic Memristor Array.

The learning and inference efficiencies of an artificial neural network represented by a cross-point synaptic memristor array can be achieved using a selector, with high selectivity (I /I ) and sufficient death region, stacked vertically on a synaptic memristor. This can prevent a sneak current in the memristor array. A selector with multiple jar-shaped conductive Cu filaments in the resistive switching layer is precisely fabricated by designing the Cu ion concentration depth profile of the CuGeSe layer as a filament source, TiN diffusion barrier layer, and Ge Se switching layer.

Surface Transformation of Spin-on-Carbon Film via Forming Carbon Iron Complex for Remarkably Enhanced Polishing Rate.

To scale down semiconductor devices to a size less than the design rule of 10 nm, lithography using a carbon polymer hard-mask was applied, e.g., spin-on-carbon (SOC) film.

Polymer link breakage of polyimide-film-surface using hydrolysis reaction accelerator for enhancing chemical-mechanical-planarization polishing-rate.

In this study, the chemical decomposition of a polyimide-film (i.e., a PI-film)-surface into a soft-film-surface containing negatively charged pyromellitic dianhydride (PMDA) and neutral 4,4'-oxydianiline (ODA) was successfully performed.

Scavenger with Protonated Phosphite Ions for Incredible Nanoscale ZrO-Abrasive Dispersant Stability Enhancement and Related Tungsten-Film Surface Chemical-Mechanical Planarization.

For scaling-down advanced nanoscale semiconductor devices, tungsten (W)-film surface chemical mechanical planarization (CMP) has rapidly evolved to increase the W-film surface polishing rate via Fenton-reaction acceleration and enhance nanoscale-abrasive (i.e., ZrO) dispersant stability in the CMP slurry by adding a scavenger to suppress the Fenton reaction.

Super fine cerium hydroxide abrasives for SiO film chemical mechanical planarization performing scratch free.

Face-centered-cubic crystallized super-fine (~ 2 nm in size) wet-ceria-abrasives are synthesized using a novel wet precipitation process that comprises a Ce precursor, CHN catalyst, and NaOH titrant for a synthesized termination process at temperature of at temperature of 25 °C. This process overcomes the limitations of chemical-mechanical-planarization (CMP)-induced scratches from conventional dry ceria abrasives with irregular surfaces or wet ceria abrasives with crystalline facets in nanoscale semiconductor devices. The chemical composition of super-fine wet ceria abrasives depends on the synthesis termination pH, that is, Ce(OH) abrasives at a pH of 4.

Design of n-base width of two-terminal-electrode vertical thyristor for cross-point memory cell without selector.

The n-base width of a two-terminal vertical thyristor fabricated with n(top-emitter)-p(base)-n(base)-p(bottom-emitter) epitaxial Si layers was designed to produce a cross-point memory cell without a selector. Both the latch-up and latch-down voltages increased linearly with the n-base width, but the voltage increase slope of the latch-up was 2.6 times higher than that of the latch-down, and the memory window increased linearly with the n-base width.

Etch characteristics of magnetic tunnel junction materials using H/NH reactive ion beam.

Magnetic tunneling junction (MTJ) materials such as CoFeB, Co, Pt, MgO, and the hard mask material such as W and TiN were etched with a reactive ion beam etching (RIBE) system using H/NH. By using gas mixtures of H and NH, especially with the H/NH( 2:1) ratio, higher etch rates of MTJ related materials and higher etch selectivities over mask materials (>30) could be observed compared to those etching using pure H( no etching) and NH. In addition, no significant chemical and physical damages were observed on etched magnetic materials surfaces and, for CoPt and MTJ nanoscale patterns etched by the H/NH( 2:1) ion beam, highly anisotropic etch profiles >83° with no sidewall redeposition could be observed.

A bow-free freestanding GaN wafer.

For applications as high-brightness light-emitting-diodes, a bow-free freestanding gallium nitride (GaN) wafer 2 inch in diameter and ∼185 μm in thickness was fabricated by process-designing pit and mirror GaN layers grown hydride-vapor-phase epitaxy, laser lift-off, N-face polishing of the pit GaN layer, and three-step polishing of the mirror GaN layer using 3.0 μm-, 0.5 μm-, and 50 nm-diameter diamond abrasives and by inductively-coupled-plasma reactive-ion etching.

Double MgO-Based Perpendicular Magnetic Tunnel Junction for Artificial Neuron.

A perpendicular spin transfer torque (p-STT)-based neuron was developed for a spiking neural network (SNN). It demonstrated the integration behavior of a typical neuron in an SNN; in particular, the integration behavior corresponding to magnetic resistance change gradually increased with the input spike number. This behavior occurred when the spin electron directions between double CoFeB free and pinned layers in the p-STT-based neuron were switched from parallel to antiparallel states.

Dislocation sink annihilating threading dislocations in strain-relaxed Si Ge layer.

We proposed a dislocation sink technology for achieving Si Ge multi-bridge-channel field-effect-transistor beyond 5 nm transistor design-rule that essentially needs an almost crystalline-defect-free Si Ge channel. A generation of a dislocation sink via H implantations in a strain-relaxed SiGe layer grown on a Si substrate and a following annealing almost annihilate completely misfit and threading dislocations located near the interface between a relaxed SiGe layer and a Si substrate. A real-time (continuous heating from room temperature to 600 °C) in situ high-resolution-transmission-electron-microscopy and inverse-fast-Fourier-transform image observation at 1.

Double Pinned Perpendicular-Magnetic-Tunnel-Junction Spin-Valve Providing Multi-level Resistance States.

A new design for high density integration greater than gigabits of perpendicular-magnetic-tunnel-junction (p-MTJ) spin-valve, called the double pinned (i.e., bottom and top pinned structures) p-MTJ spin-valve achieved a multi-level memory-cell operation exhibiting four-level resistances.

Super Ultra-High Resolution Liquid-Crystal-Display Using Perovskite Quantum-Dot Functional Color-Filters.

Quantum dot enhancement film (QDEF) working in tandem with a blue light-emitting-diode (LED) back-light-unit (BLU) has been recently used in liquid crystal display (LCD) to minimize the cross talks between the polarized emitting B-, G-, and R-light. However, they still exhibit a fundamental and considerable emitting-light-power loss from QDEF because of the light absorption loss in resin and transparent films of QDEF. In this work, we propose and demonstrate the superiority of the LCD using blue-(B-), green-(G-), and red-(R-) perovskite-quantum-dot (PrQD) functional CFs coupled with a blue LED BLU.

Author Correction: Double MgO-based Perpendicular Magnetic-Tunnel-Junction Spin-valve Structure with a Top CoFeB Free Layer using a Single SyAF [Co/Pt] Layer.

A correction to this article has been published and is linked from the HTML and PDF versions of this paper. The error has been fixed in the paper.

Double MgO-based Perpendicular Magnetic-Tunnel-Junction Spin-valve Structure with a Top CoFeB Free Layer using a Single SyAF [Co/Pt] Layer.

A new perpendicular spin-transfer-torque magnetic-tunnel-junction (p-MTJ) spin-valve was developed to achieve a high tunneling magnetoresistance (TMR) ratio. It had a double MgO-based spin-valve structure with a top CoFeB free layer and incorporated a single SyAF [Co(0.4 nm)/Pt(0.

Highly Enhanced TMR Ratio and Δ for Double MgO-based p-MTJ Spin-Valves with Top CoFeB Free Layer by Nanoscale-thick Iron Diffusion-barrier.

For double MgO-based p-MTJ spin-valves with a top CoFeB free layer ex-situ annealed at 400 °C, the insertion of a nanoscale-thickness Fe diffusion barrier between the tungsten (W) capping layer and MgO capping layer improved the face-centered-cubic (f.c.c.

Electro-Forming and Electro-Breaking of Nanoscale Ag Filaments for Conductive-Bridging Random-Access Memory Cell using Ag-Doped Polymer-Electrolyte between Pt Electrodes.

Ag-doped polymer (polyethylene oxide: PEO) conductive-bridging-random-access-memory (CBRAM) cell using inert Pt electrodes is a potential electro-forming free CBRAM cells in which electro-forming and electro-breaking of nanoscale (16~22-nm in diameter) conical or cylindrical Ag filaments occurs after a set or reset bias is applied. The dependency of the morphologies of the Ag filaments in the PEO polymer electrolyte indicates that the electro-formed Ag filaments bridging the Pt cathode and anode are generated by Ag+ ions drifting in the PEO polymer electrolyte toward the Pt anode and that Ag dendrites grow via a reduction process from the Pt anode, whereas electro-breaking of Ag filaments occurs through the oxidation of Ag atoms in the secondary dendrites and the drift of Ag ions toward the Pt cathode. The Ag doping concentration in the PEO polymer electrolyte determines the bipolar switching characteristics; i.

Dependency of Tunneling-Magnetoresistance Ratio on Nanoscale Spacer Thickness and Material for Double MgO Based Perpendicular-Magnetic-Tunneling-Junction.

It was found that in double MgO based perpendicular magnetic tunneling junction spin-valves ex-situ annealed at 400 °C, the tunneling magnetoresistance ratio was extremely sensitive to the material and thickness of the nanoscale spacer: it peaked at a specific thickness (0.40~0.53 nm), and the TMR ratio for W spacers (~134%) was higher than that for Ta spacers (~98%).

Dependency of tunneling magnetoresistance ratio on Pt seed-layer thickness for double MgO perpendicular magnetic tunneling junction spin-valves with a top CoFeB free layer ex-situ annealed at 400 °C.

For the double MgO based perpendicular magnetic tunneling junction (p-MTJ) spin-valves with a top CoFeB free layer ex situ annealed at 400 °C, the tunneling-magnetoresistance ratio (TMR) strongly depended on the platinum (Pt) seed layer thickness (t ): it peaked (∼134%) at a specific t (3.3 nm). The TMR ratio was initially and slightly increased from 113%-134% by the enhancement of the magnetic moment of the CoFeB pinned layer when t increased from 2.

Tunneling-Magnetoresistance Ratio Comparison of MgO-Based Perpendicular-Magnetic-Tunneling-Junction Spin Valve Between Top and Bottom Co2Fe6B2 Free Layer Structure.

For the perpendicular-magnetic-tunneling-junction (p-MTJ) spin valve with a nanoscale-thick bottom Co2Fe6B2 free layer ex situ annealed at 400 °C, which has been used as a common p-MTJ structure, the Pt atoms of the Pt buffer layer diffused into the MgO tunneling barrier. This transformed the MgO tunneling barrier from a body-centered cubic (b.c.