Patterning of Silicon Substrate with Self-Assembled Monolayers Using Vertically Aligned Carbon Nanotube Electron Sources.

We introduce a novel patterning technique based on e-beam lithography using vertically aligned carbon nanotube (VACNT) emitters with self-assembled monolayers (SAMs). A 20 μm line width of silicon wafer patterning was successfully demonstrated using octadecyl trichlorosilane (OTS) as a photoresist. To investigate surface modification by the irradiated electrons from the emitters, both contact angle measurement and energy dispersive X-ray (EDX) analysis were conducted.