CBRAM technology: transition from a memory cell to a programmable and non-volatile impedance for new radiofrequency applications.

Electrical resistance control programming of conductive bridging random access memory (CBRAM) radio frequency (RF) switches could benefit the development of electronically controlled non-volatile RF attenuators and other reconfigurable devices. The object of this study is to adapt a conventional CBRAM based memory cell to be used as an RF switch, and to demonstrate the feasibility of programming non-volatile RF CBRAM switches to achieve specific target resistances within a range of continuous values. The memory-RF technologic transition implies a drastic increase of the geometry in order to handle a much higher power, a decrease of the transition capacitance in order to operate at much higher frequencies, and a decrease of the LRS to a few ohms, which is critical for RF applications.