Comparison of CoW/SiO and CoB/SiO Interconnects from the Perspective of Electrical and Reliability Characteristics.

As the feature size of integrated circuits has been scaled down to 10 nm, the rapid increase in the electrical resistance of copper (Cu) metallization has become a critical issue. To alleviate the resistance increases of Cu lines, co-sputtered CoW and CoB alloying metals were investigated as conductors and barriers in this study. Annealing CoM (M = W or B)/SiO/-Si structures reduced the resistivity of CoM alloys, removed sputtering-deposition-induced damage, and promoted adhesion.

Reliability Characteristics of Metal-Insulator-Semiconductor Capacitors with Low-Dielectric-Constant Materials.

In this study, the reliability characteristics of metal-insulator-semiconductor (MIS) capacitor structures with low-dielectric-constant (low-) materials have been investigated in terms of metal gate area and geometry and thickness of dielectric film effects. Two low- materials, dense and porous low- films, were used. Experimental results indicated that the porous low- films had shorter breakdown times, lower Weibull slope parameters and electric field acceleration factors, and weaker thickness-dependence breakdowns compared to the dense low- films.

Chemical-Structure Evolution Model for the Self-Assembling of Amine-Terminated Monolayers on Nanoporous Carbon-Doped Organosilicate in Tightly Controlled Environments.

Amine-terminated self-assembled monolayers are molecular nanolayers, typically formed via wet-chemical solution on specific substrates for precision surface engineering or interface modification. However, homogeneous assembling of a highly ordered monolayer by the facile, wet method is rather tricky because it involves process parameters, such as solvent type, molecular concentration, soaking time and temperature, and humidity level. Here, we select 3-aminopropyltrimethoxysilane (APTMS) as a model molecule of aminosilane for the silanization of nanoporous carbon-doped organosilicate (p-SiOCH) under tightly controlled process environments.

Electrical Characteristics and Reliability of Nitrogen-Stuffed Porous Low-k SiOCH/MnON/Cu Integration.

In our previous study, a novel barrier processing on a porous low-dielectric constant (low-k) film was developed: an ultrathin Mn oxide on a nitrogen-stuffed porous carbon-doped organosilica film (p-SiOCH(N)) as a barrier of the Cu film was fabricated. To form a better barrier MnON film, additional annealing at 450 °C was implemented. In this study, the electrical characteristics and reliability of this integrated Cu/MnON/p-SiOCH(N)/Si structure were investigated.