Elimination of the bias-stress effect in ligand-free quantum dot field-effect transistors.

Field-effect transistors (FETs) made from colloidal quantum dot (QD) solids commonly suffer from current-voltage hysteresis caused by the bias-stress effect (BSE), which complicates fundamental studies of charge transport in QD solids and the use of QD FETs in electronics. Here, we show that the BSE can be eliminated in n-channel PbSe QD FETs by first removing the QD ligands with a dose of H2S gas and then infilling the QD films with alumina by atomic layer deposition (ALD). The H2S-treated, alumina-infilled FETs have stable, hysteresis-free device characteristics (total short-term stability), indefinite air stability (total long-term stability), and a high electron mobility of up to 14 cm2 V-1 s-1, making them attractive for QD circuitry and optoelectronic devices.

Gate-dependent carrier diffusion length in lead selenide quantum dot field-effect transistors.

We report a scanning photocurrent microscopy (SPCM) study of colloidal lead selenide (PbSe) quantum dot (QD) thin film field-effect transistors (FETs). PbSe QDs are chemically treated with sodium sulfide (Na2S) and coated with amorphous alumina (a-Al2O3) by atomic layer deposition (ALD) to obtain high mobility, air-stable FETs with a strongly gate-dependent conductivity. SPCM reveals a long photocurrent decay length of 1.

PbSe quantum dot field-effect transistors with air-stable electron mobilities above 7 cm2 V(-1) s(-1).

PbSe quantum dot (QD) field effect transistors (FETs) with air-stable electron mobilities above 7 cm(2) V(-1) s(-1) are made by infilling sulfide-capped QD films with amorphous alumina using low-temperature atomic layer deposition (ALD). This high mobility is achieved by combining strong electronic coupling (from the ultrasmall sulfide ligands) with passivation of surface states by the ALD coating. A series of control experiments rule out alternative explanations.

Robust, functional nanocrystal solids by infilling with atomic layer deposition.

Thin films of colloidal semiconductor nanocrystals (NCs) are inherently metatstable materials prone to oxidative and photothermal degradation driven by their large surface-to-volume ratios and high surface energies. (1) The fabrication of practical electronic devices based on NC solids hinges on preventing oxidation, surface diffusion, ripening, sintering, and other unwanted physicochemical changes that can plague these materials. Here we use low-temperature atomic layer deposition (ALD) to infill conductive PbSe NC solids with metal oxides to produce inorganic nanocomposites in which the NCs are locked in place and protected against oxidative and photothermal damage.

The photothermal stability of PbS quantum dot solids.

We combine optical absorption spectroscopy, ex situ transmission electron microscopy (TEM) imaging, and variable-temperature measurements to study the effect of ultraviolet (UV) light and heat treatments on ethanedithiol-treated PbS quantum dot (QD) films as a function of ambient atmosphere, temperature, and QD size. Film aging occurs mainly by oxidation or ripening and sintering depending on QD size and the presence of oxygen. We can stop QD oxidation and greatly suppress ripening by infilling the films with amorphous Al(2)O(3) using room-temperature atomic layer deposition (ALD).