Implantable silicon neural probes with nanophotonic phased arrays for single-lobe beam steering.

In brain activity mapping with optogenetics, patterned illumination is crucial for targeted neural stimulation. However, due to optical scattering in brain tissue, light-emitting implants are needed to bring patterned illumination to deep brain regions. A promising solution is silicon neural probes with integrated nanophotonic circuits that form tailored beam patterns without lenses.

Microcantilever-integrated photonic circuits for broadband laser beam scanning.

Laser beam scanning is central to many applications, including displays, microscopy, three-dimensional mapping, and quantum information. Reducing the scanners to microchip form factors has spurred the development of very-large-scale photonic integrated circuits of optical phased arrays and focal plane switched arrays. An outstanding challenge remains to simultaneously achieve a compact footprint, broad wavelength operation, and low power consumption.

Monolithically integrated, broadband, high-efficiency silicon nitride-on-silicon waveguide photodetectors in a visible-light integrated photonics platform.

Visible and near-infrared spectrum photonic integrated circuits are quickly becoming a key technology to address the scaling challenges in quantum information and biosensing. Thus far, integrated photonic platforms in this spectral range have lacked integrated photodetectors. Here, we report silicon nitride-on-silicon waveguide photodetectors that are monolithically integrated in a visible light photonic platform on silicon.

Low-loss broadband bi-layer edge couplers for visible light.

Low-loss broadband fiber-to-chip coupling is currently challenging for visible-light photonic-integrated circuits (PICs) that need both high confinement waveguides for high-density integration and a minimum feature size above foundry lithographical limit. Here, we demonstrate bi-layer silicon nitride (SiN) edge couplers that have ≤ 4 dB/facet coupling loss with the Nufern S405-XP fiber over a broad optical wavelength range from 445 to 640 nm. The design uses a thin layer of SiN to expand the mode at the facet and adiabatically transfers the input light into a high-confinement single-mode waveguide (150-nm thick) for routing, while keeping the minimum nominal lithographic feature size at 150 nm.

Back-side-on-BOX heterogeneously integrated III-V-on-silicon O-band discrete-mode lasers.

We demonstrate foundry-fabricated O-band III-V-on-silicon discrete-mode lasers. The laser fabrication follows the back-side-on-buried-oxide laser integration process and is compatible with complex, multilayer, silicon-on-insulator based platforms. A series of devices were characterized, with the best devices producing on-chip powers of nearly 20 mW with Lorentzian linewidths below 20 kHz and a side mode suppression ratio of at least 60 dB.

Visible-light silicon nitride waveguide devices and implantable neurophotonic probes on thinned 200 mm silicon wafers.

We present passive, visible light silicon nitride waveguides fabricated on ≈ 100 µm thick 200 mm silicon wafers using deep ultraviolet lithography. The best-case propagation losses of single-mode waveguides were ≤ 2.8 dB/cm and ≤ 1.

Multi-layer silicon nitride-on-silicon polarization-independent grating couplers.

A polarization-independent grating coupler is proposed and demonstrated in a 3-layer silicon nitride-on-silicon photonic platform. Polarization independent coupling was made possible by the supermodes and added degrees of geometric freedom unique to the 3-layer photonic platform. The grating was designed via optimization algorithms, and the simulated peak coupling efficiency was -2.

Flip-chip integrated silicon Mach-Zehnder modulator with a 28nm fully depleted silicon-on-insulator CMOS driver.

We present a silicon electro-optic transmitter consisting of a 28nm ultra-thin body and buried oxide fully depleted silicon-on-insulator (UTBB FD-SOI) CMOS driver flip-chip integrated onto a Mach-Zehnder modulator. The Mach-Zehnder silicon optical modulator was optimized to have a 3dB bandwidth of around 25 GHz at -1V bias and a 50 Ω impedance. The UTBB FD-SOI CMOS driver provided a large output voltage swing around 5 V to enable a high dynamic extinction ratio and a low device insertion loss.

Binary particle swarm optimized 2 × 2 power splitters in a standard foundry silicon photonic platform.

Compact power splitters designed ab initio using binary particle swarm optimization in a 2D mesh for a standard foundry silicon photonic platform are studied. Designs with a 4.8  μm×4.